Comchip Technology 정류기-싱글
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Comchip Technology
기록 1,003
페이지 11/34
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Comchip Technology |
DIODE SCHOTTKY 60V 3A 3220 |
2,178 |
|
Automotive, AEC-Q101 | Schottky | 60V | 3A | 700mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 180pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 3220/DO-214AB | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 150V 5A DO214AB |
8,532 |
|
- | Schottky | 150V | 5A (DC) | 870mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 200V 5A DO214AB |
8,388 |
|
- | Schottky | 200V | 5A (DC) | 900mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 200V | 380pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 175°C |
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Comchip Technology |
DIODE GEN PURP 400V 3A 3220 |
6,966 |
|
Automotive, AEC-Q101 | Standard | 400V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 400V | 23pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 3220/DO-214AB | -65°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 3A 3220 |
2,286 |
|
Automotive, AEC-Q101 | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 180pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 3220/DO-214AB | -55°C ~ 125°C |
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Comchip Technology |
DIODE GEN PURP 200V 3A DO214AB |
4,068 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 100V 3A 3220 |
3,544 |
|
Automotive, AEC-Q101 | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 180pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 3220/DO-214AB | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 200V 10A TO277 |
2,322 |
|
- | Schottky | 200V | 10A | 900mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277 (Z3) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 200V 20A TO277 |
2,106 |
|
- | Schottky | 200V | 20A | 930mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277 (Z3) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 45V 10A SMC |
8,712 |
|
- | Schottky | 45V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Surface Mount | Z5-T | SMC (Z5-T) | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 50V 1A DO41 |
17,052 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 400V 1A DO41 |
8,304 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
10,704 |
|
- | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 190pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
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Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
7,932 |
|
- | Silicon Carbide Schottky | 650V | 11A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 181pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
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Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
17,148 |
|
- | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 190pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
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Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
8,868 |
|
- | Silicon Carbide Schottky | 650V | 21.5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 424pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
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Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
8,172 |
|
- | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 430pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
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Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
11,928 |
|
- | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 430pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
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Comchip Technology |
DIODE GEN PURP 75V 150MA DO35 |
7,434 |
|
- | Standard | 75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Comchip Technology |
DIODE GEN PURP 75V 150MA SOD80 |
3,726 |
|
- | Standard | 75V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 2.5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 175°C (Max) |
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Comchip Technology |
DIODE GEN PURP 1KV 1A DO41 |
4,032 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 75V 150MA 1005 |
2,988 |
|
- | Standard | 75V | 150mA | 1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 2.5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
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Comchip Technology |
DIODE GEN PURP 400V 1A SOD123 |
4,878 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -55°C ~ 150°C |
|
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Comchip Technology |
DIODE SCHOTTKY 80V 3A DO214AB |
6,966 |
|
- | Schottky | 80V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | 125°C (Max) |
|
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Comchip Technology |
DIODE SCHOTTKY 150V 2A DO214AC |
5,976 |
|
- | Schottky | 150V | 2A (DC) | 870mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 40V 1A 1206 |
2,826 |
|
Automotive, AEC-Q101 | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 110pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 1206 | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 20V 500MA SOD123 |
6,246 |
|
- | Schottky | 20V | 500mA | 385mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 20V | - | Surface Mount | SOD-123 | SOD-123 | 125°C (Max) |
|
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Comchip Technology |
DIODE GEN PURP 100V 3A DO201AD |
4,464 |
|
- | Standard | 100V | 3A | 950mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-27 (DO-201AD) | -65°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 30V 100MA 1005 |
8,532 |
|
- | Schottky | 30V | 100mA | 350mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 10V | - | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 60V 5A DO201AD |
7,704 |
|
- | Schottky | 60V | 5A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 500pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |