GeneSiC Semiconductor 트랜지스터-FET, MOSFET-단일
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필터보기
필터 재설정
필터 적용
카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체GeneSiC Semiconductor
기록 27
페이지 1/1
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 15A |
20,400 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 15A (Tc) | - | - | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 45A |
7,794 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091pF @ 800V | - | 282W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 25A |
17,196 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | 120mOhm @ 10A | - | - | - | 1403pF @ 800V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | - | - |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1700V 8A TO-247AB |
14,616 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1.2KV 50A |
6,024 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | 7209pF @ 800V | - | 583W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1700V 4A TO-247AB |
8,172 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 4A (Tc) (95°C) | - | 480mOhm @ 4A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 100V 9A |
6,156 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 100V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 300V 9A |
4,752 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 300V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 25A TO263-7 |
8,496 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403pF @ 800V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 600V 100A |
6,300 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 600V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 769W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-258 | TO-258-3, TO-258AA |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1700V 16A TO-247AB |
8,460 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 16A (Tc) (90°C) | - | 110mOhm @ 16A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO-257 |
4,518 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324pF @ 35V | - | 47W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 650V 4A TO276 |
3,562 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 4A (Tc) (165°C) | - | 415mOhm @ 4A | - | - | - | 324pF @ 35V | - | 125W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 650V 7A TO-257 |
5,634 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 7A (Tc) (165°C) | - | 170mOhm @ 7A | - | - | - | 720pF @ 35V | - | 80W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 650V 8A TO276 |
6,678 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 8A (Tc) (158°C) | - | 170mOhm @ 8A | - | - | - | 720pF @ 35V | - | 200W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 650V 15A TO-257 |
4,086 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | - | 1534pF @ 35V | - | 172W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 650V 16A TO276 |
8,208 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 16A (Tc) (155°C) | - | 105mOhm @ 16A | - | - | - | 1534pF @ 35V | - | 330W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 3A TO-247AB |
2,556 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 3A (Tc) (95°C) | - | 460mOhm @ 3A | - | - | - | - | - | 15W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 6A TO-247AB |
4,194 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 6A (Tc) (90°C) | - | 220mOhm @ 6A | - | - | - | - | - | - | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 5A |
4,896 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 5A (Tc) | - | 280mOhm @ 5A | - | - | - | - | - | 106W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1.2KV 10A |
7,020 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 10A (Tc) | - | 140mOhm @ 10A | - | - | - | - | - | 170W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1.2KV 20A |
2,862 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 20A (Tc) | - | 70mOhm @ 20A | - | - | - | - | - | 282W (Tc) | 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1.7KV 100A |
2,358 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 583W (Tc) | 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 160A SOT227 |
8,334 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400pF @ 800V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1200V 45A TO247 |
7,074 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1200V | 45A (Tc) | - | 50mOhm @ 20A | - | - | - | 3091pF @ 800V | - | 282W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AB | TO-247-3 |
|
|
|
GeneSiC Semiconductor |
TRANSISTOR 1200V 100A TO263-7 |
3,562 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 1700V 160A SOT227 |
8,694 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 1700V | 160A (Tc) | - | 10mOhm @ 100A | - | - | - | 14400pF @ 800V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |