Global Power Technologies Group 정류기-싱글
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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Global Power Technologies Group
기록 65
페이지 1/3
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A DPAK-2 |
4,752 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | 158pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 650V 3A TO220-2 |
8,208 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 158pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO220-2 |
4,662 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 600V | 158pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 3A TO252-2 |
2,286 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 3A | 1.65V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 158pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 15A TO252 |
7,614 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | - | 50µA @ 650V | 264pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 15A TO220-2 |
8,370 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 264pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
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|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO220-2 |
3,960 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 316pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 15A TO220-2 |
4,554 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 15A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | - | 50µA @ 650V | 264pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO252-2 |
7,092 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.65V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 600V | 316pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO263-2 |
3,598 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A (DC) | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 632pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 29A TO252-2 |
6,894 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 29A (DC) | 1.9V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 632pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO247-2 |
8,550 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 40µA @ 600V | 527pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO220-2 |
7,362 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 632pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO220-2 |
2,160 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 527pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 24A TO220-2 |
4,176 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 508pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHTKY 1.2KV 24A TO252-2L |
7,722 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 508pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 650V 12A TO220-2 |
7,560 |
|
Amp+™ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 632pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 58A TO247-2 |
4,734 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 58A (DC) | 1.65V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 1054pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -50°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 68A TO247-2 |
3,708 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 68A (DC) | 1.65V @ 24A | No Recovery Time > 500mA (Io) | - | 80µA @ 600V | 1265pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 82A TO247-2 |
4,914 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 82A (DC) | 1.9V @ 36A | No Recovery Time > 500mA (Io) | - | 500µA @ 600V | 1897pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 20A TO220-2 |
5,418 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 20A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 1270pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO220-2 |
5,850 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | - | 30µA @ 1200V | 952pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE GP 1.7KV 300A ADD-A-PAK |
3,348 |
|
Amp+™ | Standard | 1700V | 300A (DC) | 1.9V @ 300A | Standard Recovery >500ns, > 200mA (Io) | 540ns | - | - | Chassis Mount | ADD-A-PAK (3) | ADD-A-PAK® | -40°C ~ 150°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTT 1.2KV 60A TO247-2 |
7,308 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 60A (DC) | 1.7V @ 60A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3581pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO247-2 |
7,380 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 1581pF @ 1V, 1MHZ | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 50A TO247-2 |
4,860 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 50A (DC) | 1.65V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 600V | 2635pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 1.2KV 50A TO247-2 |
4,014 |
|
Amp+™ | Silicon Carbide Schottky | 1200V | 50A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 3174pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 3A TO252-2 |
6,354 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 122pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO220-2 |
2,250 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 135°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 6A TO263-2 |
3,888 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 243pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 135°C |