Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 102/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
PLANAR >= 100V |
4,392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3450pF @ 25V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,734 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 31A TO-262 |
4,122 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 31A TO-262 |
7,146 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO-220 |
5,526 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V TO-247 |
5,454 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 16A TO-220FP |
5,184 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO220-3 |
5,166 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 25A TO-247 |
4,662 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
3,150 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | 3330pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
8,568 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
3,312 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,356 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,500 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 800V TO247 |
6,732 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
AUTOMOTIVE |
2,448 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 117nC @ 10V | ±20V | 2300pF @ 100V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 57.7A TO220 |
8,100 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 57.7A (Tc) | 10V | 74mOhm @ 21A, 10V | 3.5V @ 1.4mA | 138nC @ 10V | ±20V | 3020pF @ 100V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-4 |
7,164 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100nC @ 10V | ±20V | 4750pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO247 |
7,866 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 31A TO-247 |
7,416 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_LEGACY |
4,176 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.8mA | 167nC @ 10V | ±20V | 5030pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 35A TO247-4 |
5,220 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2850pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
MOSFET N-CH 650V 57.7A TO220 |
6,102 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 57.7A (Tc) | 10V | 74mOhm @ 13.9A, 10V | 3.5V @ 1.4mA | 17nC @ 10V | ±20V | 3020pF @ 100V | - | 480.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
2,862 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
TRANSISTOR N-CH |
7,146 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V TO247-4 |
8,244 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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Infineon Technologies |
TRANSISTOR N-CH |
6,714 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 46A TO-263-3 |
8,982 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8,100 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 150V 171A AUTO |
2,988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227nC @ 10V | ±30V | 10470pF @ 50V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |