Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 117/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 55A D2PAK |
3,312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 61A D2PAK |
5,058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA | 58nC @ 4.5V | ±10V | 2500pF @ 15V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 61A D2PAK |
4,104 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 61A (Tc) | 4.5V, 7V | 13mOhm @ 37A, 7V | 700mV @ 250µA | 58nC @ 4.5V | ±10V | 2500pF @ 15V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK |
3,942 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 14mOhm @ 34A, 10V | 1V @ 250µA | 43nC @ 4.5V | ±16V | 1900pF @ 25V | - | 3.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 54A TO-220AB |
7,920 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 32A, 10V | 1V @ 250µA | 44nC @ 4.5V | ±16V | 2300pF @ 25V | - | 2W (Ta), 70W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 54A D2PAK |
8,064 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 32A, 10V | - | 44nC @ 4.5V | ±16V | 2300pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 54A D2PAK |
7,560 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 32A, 10V | - | 44nC @ 4.5V | ±16V | 2300pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK |
3,508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 48A D2PAK |
6,210 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 48A (Tc) | 4.5V, 7V | 16mOhm @ 29A, 7V | 700mV @ 250µA | 43nC @ 4.5V | ±10V | 2000pF @ 15V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 39A D2PAK |
5,958 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 39A (Tc) | 4.5V, 7V | 20mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | ±10V | 1300pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 39A D2PAK |
5,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 39A (Tc) | 4.5V, 7V | 20mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | ±10V | 1300pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 38A TO-220AB |
2,124 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK |
6,228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK |
3,762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK |
7,740 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 38A D2PAK |
6,228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 85A D2PAK |
3,492 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA | 78nC @ 4.5V | ±10V | 3300pF @ 15V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 85A D2PAK |
2,340 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA | 78nC @ 4.5V | ±10V | 3300pF @ 15V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
5,382 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA | 110nC @ 4.5V | ±10V | 4700pF @ 15V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 89A D2PAK |
8,082 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | ±16V | 3600pF @ 25V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK |
6,696 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140nC @ 4.5V | ±16V | 5000pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 10A D2PAK |
5,904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK |
8,298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | ±16V | 1800pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 24A TO-262 |
6,408 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | - | - | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH 20V 24A TO-220AB |
8,982 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 20V 24A D2PAK |
8,496 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 24A D2PAK |
2,556 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 24A (Tc) | 2.5V, 4.5V | 42mOhm @ 12A, 4.5V | 1V @ 250µA | 44nC @ 4.5V | ±8V | 1460pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 31A TO220FP |
6,426 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 31A (Tc) | 4V, 10V | 26mOhm @ 16A, 10V | 2V @ 250µA | 140nC @ 5V | ±16V | 3700pF @ 25V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 3.9A SOT223 |
3,508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.9A (Ta) | 4V, 10V | 45mOhm @ 3.9A, 10V | 2.4V @ 250µA | 14nC @ 5V | ±16V | 530pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 10A DPAK |
8,082 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |