Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 163/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 25V 50A IPAK |
6,678 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 6.2mOhm @ 50A, 10V | 2V @ 30µA | 19nC @ 5V | ±20V | 2390pF @ 15V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | P-TO251-3-1 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A IPAK |
4,248 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.3mOhm @ 50A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2800pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO-247 |
6,030 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23 |
5,652 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23 |
8,982 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323 |
5,400 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET P-CH 60V 8.8A D2PAK |
8,586 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Ta) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 420pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
7,794 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
3,744 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 220nC @ 10V | ±20V | 8180pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A D2PAK |
5,562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172nC @ 10V | ±20V | 7220pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A D2PAK |
2,322 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 8000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 100A D2PAK |
6,228 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 4.7mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 6800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 100A D2PAK |
7,218 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 7530pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 100A D2PAK |
2,016 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 6.8mOhm @ 66A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 6020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 100A D2PAK |
2,430 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 68A, 10V | 2V @ 250µA | 246nC @ 10V | ±20V | 7130pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A D2PAK |
8,838 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | ±20V | 426pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A D2PAK |
2,340 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 10V | 170mOhm @ 7.8A, 10V | 4V @ 21µA | 19.4nC @ 10V | ±20V | 426pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 10.3A D2PAK |
3,942 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Tc) | 10V | 154mOhm @ 8.1A, 10V | 2V @ 21µA | 22nC @ 10V | ±20V | 444pF @ 25V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK-7 |
7,740 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 7320pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK-7 |
7,146 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.7mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 8000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET P-CH 60V 18.7A D2PAK |
7,236 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.7A (Ta) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | ±20V | 860pF @ 25V | - | 81.1W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 21A D2PAK |
7,884 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 21A (Tc) | 10V | 80mOhm @ 15A, 10V | 4V @ 44µA | 38.4nC @ 10V | ±20V | 865pF @ 25V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 35A D2PAK |
6,966 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 44mOhm @ 26.4A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 1570pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 42A D2PAK |
7,776 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | ±20V | 1130pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 47A D2PAK |
7,578 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 47A D2PAK |
4,194 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | ±20V | 2500pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 70A D2PAK |
3,400 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 73A D2PAK |
2,970 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 73A (Tc) | 4.5V, 10V | 8.1mOhm @ 36A, 10V | 2V @ 55µA | 46.2nC @ 10V | ±20V | 1710pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
3,438 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 12mOhm @ 38A, 10V | 4V @ 93µA | 60nC @ 10V | ±20V | 2350pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK |
4,446 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 3.1mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |