Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 18/225
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 200V 24A D2PAK |
53,448 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 77.5mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO-220AB |
746,436 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4V, 10V | 35mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 31A TO-220AB |
28,440 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 60mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 64A TO-220AB |
32,484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO263 |
29,964 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 12A TO220FP |
87,132 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 36A TO-220AB |
97,452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 4V, 10V | 44mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | ±16V | 1800pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 72A TO-220AB |
23,478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 72A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1985pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 13A PG-TO220 |
22,512 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | ±20V | 773pF @ 100V | Super Junction | 92W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 78A TO220AB |
73,626 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 3.2mOhm @ 40A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | ±20V | 5110pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 150V 13A TO-220AB |
17,826 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 84A TO-220AB |
32,358 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3210pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 75A TO-220AB |
18,648 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 100µA | 86nC @ 10V | ±20V | 2810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 135A D2PAK |
28,416 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 135A (Tc) | 10V | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230nC @ 10V | ±20V | 5110pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 17A TO-220AB |
12,750 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 17A (Tc) | 10V | 95mOhm @ 10A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 800pF @ 50V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
23,118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 20A TO220FP |
25,944 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 10V | 52mOhm @ 11A, 10V | 4V @ 250µA | 94nC @ 10V | ±20V | 1400pF @ 25V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 116A TO-220AB |
13,908 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 1V @ 250µA | 60nC @ 4.5V | ±16V | 3290pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 9A WDSON-2 |
101,856 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 83A (Tc) | 6V, 10V | 5.6mOhm @ 30A, 10V | 3.5V @ 100µA | 74nC @ 10V | ±20V | 5500pF @ 50V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 20.2A TO263 |
12,702 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 190mOhm @ 9.5A, 10V | 3.5V @ 630µA | 63nC @ 10V | ±20V | 1400pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 140A TO-220AB |
14,190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 5.5mOhm @ 71A, 10V | 1V @ 250µA | 76nC @ 4.5V | ±16V | 3720pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 82A TO-220AB |
13,146 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 160A I-PAK |
29,388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | ±20V | 4880pF @ 15V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 75V 100A TDSON-8 |
76,056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 3.6mOhm @ 50A, 10V | 3.8V @ 110µA | 63.4nC @ 10V | ±20V | 4400pF @ 37.5V | - | 2.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 120A D2PAK |
61,458 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4750pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 97A D2PAK |
16,644 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB |
212,400 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 12mOhm @ 15A, 10V | 2V @ 250µA | 24nC @ 4.5V | ±12V | 2417pF @ 15V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N CH 40V 120A TO220 |
21,576 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | 4730pF @ 25V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 42A TO-220AB |
16,788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1900pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
17,772 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |