Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 190/225
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설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
3,672 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 3800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
6,642 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | ±20V | 3160pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
6,066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | ±20V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
2,304 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 11mOhm @ 60A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7,056 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | ±20V | 5000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO-220 |
4,392 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3-11 |
3,726 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 100V 69A TO251-3-11 |
3,006 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 69A (Tc) | 4.5V, 10V | 11.8mOhm @ 69A, 10V | 2.4V @ 83µA | 58nC @ 10V | ±20V | 5600pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 550V 7.1A TO-251 |
8,712 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3 |
6,336 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 80V 50A TO251-3 |
7,740 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 6V, 10V | 10.3mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 80V 50A TO251-3 |
3,384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 6V, 10V | 13.5mOhm @ 50A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1730pF @ 40V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 17A TO251-3 |
6,948 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 64mOhm @ 17A, 10V | 4V @ 20µA | 9nC @ 10V | ±20V | 569pF @ 50V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 13A TO251-3 |
7,776 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | ±20V | 716pF @ 50V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 550V 17A TO-247 |
6,228 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45nC @ 10V | ±20V | 1800pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 550V 12A TO247-3 |
2,646 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 12A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 31nC @ 10V | ±20V | 1190pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 550V 10A TO247-3 |
2,124 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25nC @ 10V | ±20V | 1020pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 560V 9A TO-247 |
3,762 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | ±20V | 890pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 12A TO-247 |
4,734 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | ±20V | 1200pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V 5.7A TO-247 |
3,528 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.7A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 3.5V @ 370µA | 34nC @ 10V | ±20V | 850pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-247 |
4,068 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 5.1A (Tc) | 10V | 1.2Ohm @ 2.8A, 10V | 3.5V @ 310µA | 28nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO-247 |
4,050 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 200MA SOT-23 |
2,934 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323 |
3,546 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-323 |
5,958 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5nC @ 10V | ±20V | 45pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
4,212 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 41.8nC @ 10V | ±20V | 1550pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-262 |
2,070 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 13.4A TO-262 |
7,632 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84nC @ 10V | ±20V | 1820pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO262-3 |
5,148 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1600pF @ 25V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-262 |
8,712 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |