Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 194/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 25V 15A 8VQFN |
8,136 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 51A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.35V @ 25µA | 14.5nC @ 10V | ±20V | 988pF @ 13V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 25V 81A DPAK |
8,190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15nC @ 4.5V | ±20V | 1470pF @ 13V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 57A DPAK |
2,538 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 900pF @ 13V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 28A 8VQFN |
5,310 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 100A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4490pF @ 20V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 150V 10A 8VQFN |
5,202 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 10A (Ta), 56A (Tc) | 10V | 31mOhm @ 34A, 10V | 5V @ 150µA | 50nC @ 10V | ±20V | 2300pF @ 50V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 200V 5.1A 8PQFN |
7,128 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.1A (Ta) | 10V | 55mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | ±20V | 2290pF @ 100V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 40A 8VQFN |
2,070 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 83nC @ 10V | ±20V | 6115pF @ 13V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 25V 15A 8VQFN |
8,208 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 51A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.35V @ 25µA | 14.5nC @ 10V | ±20V | 988pF @ 13V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 29A 8VQFN |
5,130 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2.35V @ 100µA | 55nC @ 10V | ±20V | 3635pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A 8VQFN |
8,550 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 79A (Tc) | 4.5V, 10V | 4.5mOhm @ 47A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2360pF @ 10V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 13A 8PQFN |
4,392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 100A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | 2.5V @ 150µA | 94nC @ 10V | ±16V | 5185pF @ 50V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 174A 2WDSON |
5,778 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 174A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2.2V @ 250µA | 92nC @ 10V | ±20V | 8400pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 145A 2WDSON |
3,510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 145A (Tc) | 4.5V, 10V | 2.4mOhm @ 30A, 10V | 2.2V @ 250µA | 72nC @ 10V | ±20V | 4900pF @ 15V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 71A 2WDSON |
7,488 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 71A (Tc) | 4.5V, 10V | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29nC @ 10V | ±20V | 2700pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 71A 2WDSON |
8,100 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 71A (Tc) | 4.5V, 10V | 5.3mOhm @ 30A, 10V | 2.2V @ 250µA | 29nC @ 10V | ±20V | 2700pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 30V 53A MG-WDSON-2 |
7,920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 53A (Tc) | 4.5V, 10V | 8.3mOhm @ 20A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1800pF @ 15V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT23 |
6,966 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 0V, 10V | 500Ohm @ 16mA, 10V | 1.6V @ 8µA | 2.1nC @ 5V | ±20V | 28pF @ 25V | Depletion Mode | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 21MA SOT23 |
6,606 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 4.5V, 10V | 500Ohm @ 16mA, 10V | 2.6V @ 8µA | 1nC @ 10V | ±20V | 28pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT23 |
4,410 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9nC @ 5V | ±20V | 44pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 1.5A SOT23 |
3,454 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 140mOhm @ 1.5A, 10V | 2V @ 6.3µA | 2.9nC @ 10V | ±20V | 294pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 2.3A SOT23 |
6,786 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 2.5V | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | ±8V | 529pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 20V 1.4A SOT323 |
3,690 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.8V, 2.5V | 160mOhm @ 1.4A, 2.5V | 750mV @ 3.7µA | 0.6nC @ 2.5V | ±8V | 180pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220-FP |
2,538 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | ±20V | 512pF @ 100V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
5,670 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 140µA | 195nC @ 10V | ±20V | 15750pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
8,712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 120µA | 160nC @ 10V | ±20V | 13150pF @ 25V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
2,088 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.1mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7 |
7,254 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3 |
2,682 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 9.1mOhm @ 45A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO263-3 |
3,078 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 7.9mOhm @ 45A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
8,874 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.5mOhm @ 80A, 10V | 4V @ 65µA | 60nC @ 10V | ±20V | 3900pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |