Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 205/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 43A TO220AB |
2,232 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 43A (Tc) | 10V | 9.3mOhm @ 26A, 10V | 4V @ 150µA | 110nC @ 10V | ±30V | 4910pF @ 50V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N CH 20V 28A PQFN 5X6 MM |
3,762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | ±12V | 3710pF @ 10V | - | 3.6W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 25V 19A DIRECTFET |
7,848 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 74A (Tc) | 4.5V, 10V | 3.7mOhm @ 19A, 10V | 2.1V @ 35µA | 17nC @ 4.5V | ±16V | 1590pF @ 13V | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET |
6,786 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | ±16V | 4160pF @ 13V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 35A DIRECTFET |
4,752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Ta), 213A (Tc) | 4.5V, 10V | 1.1mOhm @ 35A, 10V | 2.1V @ 100µA | 62nC @ 4.5V | ±16V | 5435pF @ 13V | Schottky Diode (Body) | 2.1W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 23A DIRECTFET |
7,056 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 38nC @ 4.5V | ±20V | 4110pF @ 15V | Schottky Diode (Body) | 2.1W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 500V 3.6A DPAK |
8,118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 5V @ 250µA | 20nC @ 10V | ±20V | 810pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 500V 6A DPAK |
5,688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Tc) | 10V | 1.3Ohm @ 3.7A, 10V | 5V @ 250µA | 34nC @ 10V | ±20V | 1346pF @ 25V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 26A 8PQFN |
4,716 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 26A (Ta), 85A (Tc) | 4.5V, 10V | 3.3mOhm @ 50A, 10V | 2.5V @ 100µA | 58nC @ 4.5V | ±16V | 3720pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 14A 8PQFN |
5,670 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 14A (Ta), 75A (Tc) | 10V | 8.5mOhm @ 45A, 10V | 4V @ 100µA | 72nC @ 10V | ±20V | 3110pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 45A TDSON-8 |
3,330 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 7.4A (Ta), 45A (Tc) | 4.5V, 10V | 20.5mOhm @ 45A, 10V | 2.4V @ 43µA | 41nC @ 10V | ±20V | 2900pF @ 50V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 120V 37A 8TDSON |
3,454 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 37A (Tc) | 10V | 24mOhm @ 31A, 10V | 4V @ 35µA | 27nC @ 10V | ±20V | 1900pF @ 60V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 22A TDSON-8 |
3,418 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 55nC @ 10V | ±20V | 4300pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 19A TDSON-8 |
7,002 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 19A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2V @ 250µA | 41nC @ 10V | ±20V | 3200pF @ 15V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 34V 17A TDSON-8 |
3,526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 17A (Ta), 85A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 2700pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 45A TDSON-8 |
8,802 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 45A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 16nC @ 10V | ±20V | 1300pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 44A TDSON-8 |
3,114 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) 44A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 13A WDSON-2 |
3,060 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 56A (Tc) | 10V | 7.7mOhm @ 30A, 10V | 4V @ 33µA | 46nC @ 10V | ±20V | 3700pF @ 30V | - | 2.2W (Ta), 38W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
3,402 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
2,178 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT-223 |
4,392 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | ±20V | 364pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223 |
7,866 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 120mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | ±20V | 340pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
3,400 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.67nC @ 10V | ±20V | 69pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO263-3 |
4,860 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 4.5V, 10V | 2.2mOhm @ 90A, 10V | 2V @ 95µA | 166nC @ 10V | ±20V | 13000pF @ 20V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO263-3 |
3,798 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 4V @ 95µA | 120nC @ 10V | ±20V | 10000pF @ 20V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 140A TO263-7 |
6,696 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 140A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 141µA | 198nC @ 10V | ±20V | 16000pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
7,398 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78nC @ 10V | ±20V | 6100pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
8,586 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.1mOhm @ 80A, 10V | 4V @ 45µA | 56nC @ 10V | ±20V | 4500pF @ 20V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
7,020 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2.2V @ 58µA | 50nC @ 4.5V | ±20V | 8400pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 70A TO263-3 |
2,106 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 5.2mOhm @ 70A, 10V | 4V @ 33µA | 42nC @ 10V | ±20V | 3300pF @ 20V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |