Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 22/225
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설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 200V 76A TO-220AB |
10,680 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 76A (Tc) | 10V | 20mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-247AC |
28,752 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 9620pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 180A TO-220AB |
20,520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | ±16V | 11360pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 195A |
13,260 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 250µA | 258nC @ 4.5V | ±20V | 15570pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 60A TO-220AB |
102,240 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 5860pF @ 25V | - | 390W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 44A TO-247AC |
8,304 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 310W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 65A TO-247AC |
9,216 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 25mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO220-3 |
15,330 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 8V, 10V | 11.1mOhm @ 83A, 10V | 4V @ 160µA | 55nC @ 10V | ±20V | 3230pF @ 75V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 210A TO-247AC |
29,988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 210A (Tc) | 7V, 10V | 2.8mOhm @ 76A, 10V | 4V @ 250µA | 209nC @ 10V | ±20V | 8250pF @ 25V | - | 3.8W (Ta), 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-247AC |
12,108 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.7mOhm @ 195A, 10V | 4V @ 250µA | 330nC @ 10V | ±20V | 8920pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 57A TO-247AC |
9,840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 57A (Tc) | 10V | 33mOhm @ 35A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 5860pF @ 25V | - | 360W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 21A TO-220 |
18,900 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 23A TO220-3 |
21,744 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
6,336 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 3mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | ±20V | 10300pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO247-3 |
8,160 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 37A TO220-3 |
8,232 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 600V 37A TO220 |
8,928 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET NCH 650V 135A PG-HDSOP-10 |
14,298 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | ±20V | 2670pF @ 400V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO220-3 |
13,020 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | ±20V | 15600pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 24A TO247 |
10,584 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 95mOhm @ 11.8A, 10V | 4V @ 590µA | 45nC @ 10V | ±20V | 2140pF @ 400V | - | 128W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 84A TO220 |
23,850 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 84A (Tc) | 10V | 12mOhm @ 84A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 6650pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO-247 |
18,888 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
7,728 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | ±20V | 2721pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 61A TO220 |
8,436 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 61A (Tc) | 10V | 22mOhm @ 61A, 10V | 4V @ 270µA | 86nC @ 10V | ±20V | 7076pF @ 125V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 195A TO-247AC |
20,880 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 1.85mOhm @ 195A, 10V | 4V @ 250µA | 570nC @ 10V | ±20V | 19230pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 300V 70A TO-247AC |
22,668 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 32mOhm @ 42A, 10V | 5V @ 250µA | 270nC @ 10V | ±20V | 10774pF @ 50V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 53.5A TO247-3 |
8,460 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100nC @ 10V | ±20V | 4750pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 182A TO247AC |
8,292 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 182A (Tc) | 10V | 6.6mOhm @ 82A, 10V | 4V @ 270µA | 203nC @ 10V | ±20V | 9820pF @ 50V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
TRENCH_MOSFETS |
9,300 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | - | 6V, 10V | 1.28mOhm @ 100A, 10V | 3.8V @ 278µA | 555nC @ 10V | ±20V | 25000pF @ 50V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
9,564 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 44A (Tc) | 10V | 41mOhm @ 44A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7180pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |