Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 72/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
CONSUMER |
5,904 |
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Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8 |
6,588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 7.6mOhm @ 20A, 10V | 4V @ 35µA | 50nC @ 10V | ±20V | 4000pF @ 30V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 3.9A TO-252 |
3,400 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1nC @ 10V | ±20V | 380pF @ 100V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 3.9A TO-252 |
2,700 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1nC @ 10V | ±20V | 380pF @ 100V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
LOW POWER_LEGACY |
8,676 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1nC @ 10V | ±20V | 380pF @ 100V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 14A DPAK |
2,466 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 620pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 21A 8TSDSON |
5,166 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | - | 32nC @ 10V | ±20V | 2300pF @ 20V | - | 2.1W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A 8SON |
8,982 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2V @ 250µA | 26nC @ 10V | ±20V | 1600pF @ 15V | - | 2.1W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
5,166 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | Super Junction | 26W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
2,718 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 34µA | 47.1nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR P-CH BARE DIE |
7,182 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
7,812 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
7,560 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3 |
6,750 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 7.5mOhm @ 50A, 10V | 4V @ 40µA | 35nC @ 10V | ±20V | 2350pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 60V 64A 8TDSON |
8,586 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 64A (Tc) | 4.5V, 10V | 6.5mOhm @ 32A, 10V | 2.3V @ 20µA | 13nC @ 4.5V | ±20V | 1800pF @ 30V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 75V 56A I-PAK |
3,978 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | ±20V | 3107pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
TRANSISTOR N-CH |
2,682 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK |
8,712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | ±16V | 1870pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
5,508 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
8,118 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | Super Junction | 30W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 20A I-PAK |
7,326 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | - | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | - | 660pF @ 50V | - | - | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
8,568 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | - | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | - | 900pF @ 25V | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
2,754 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3,580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
2,322 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8DSO |
3,582 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2V @ 250µA | 73nC @ 10V | ±20V | 5700pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT-223 |
6,894 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
2,862 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
5,904 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT223 |
2,754 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |