Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 78/225
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 40V 135A |
5,544 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 135A (Tc) | 6V, 10V | 2.3mOhm @ 81A, 10V | 3.9V @ 100µA | 81nC @ 10V | ±20V | 3913pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MF | DirectFET™ Isometric MF |
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Infineon Technologies |
MOSFET N-CH 150V 21A TO263-3 |
6,804 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 887pF @ 75V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 40V 120A TO-262 |
8,838 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | 4730pF @ 25V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 700V 7.4A TO220-3 |
6,318 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 700V | 7.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 68W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
3,762 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 3.6mOhm @ 100A, 10V | 4V @ 40µA | 55nC @ 10V | ±20V | 4100pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 29A DIRECTFET |
5,490 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 29A (Ta), 166A (Tc) | 4.5V, 10V | 2.1mOhm @ 29A, 10V | 2.4V @ 100µA | 44nC @ 4.5V | ±20V | 3890pF @ 13V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A TO-251 |
6,822 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3,366 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET P-CH TO263-3 |
6,102 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 7.9mOhm @ 80A, 10V | 2.2V @ 120µA | 92nC @ 10V | ±16V | 5430pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 48A D2PAK |
7,650 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
5,346 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81nC @ 10V | ±20V | 6500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
3,384 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH TO263-3 |
6,390 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 10.8mOhm @ 45A, 10V | 2V @ 85µA | 55nC @ 10V | +5V, -16V | 3770pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 9A WDSON-2 |
5,598 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 40A (Tc) | 6V, 10V | 13.4mOhm @ 30A, 10V | 3.5V @ 40µA | 30nC @ 10V | ±20V | 2300pF @ 50V | - | 2.2W (Ta), 43W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Infineon Technologies |
MOSFET N-CH 40V 14A DIRECTFET |
2,466 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 14A (Ta) | 4.5V, 10V | 6.6mOhm @ 35A, 10V | 2.5V @ 50µA | 33nC @ 4.5V | ±16V | 2020pF @ 25V | - | 2.2W (Ta), 41W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ SC | DirectFET™ Isometric SC |
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Infineon Technologies |
MOSFET N-CH 30V 161A I-PAK |
7,974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
3,528 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 42A DPAK |
2,502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48nC @ 4.5V | ±16V | 3980pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
3,366 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5.1mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | ±16V | 8180pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 70A TO262-3-1 |
2,232 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 26µA | 32nC @ 10V | ±20V | 2550pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
8,190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3270pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
6,066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 3.3mOhm @ 90A, 10V | 3.3V @ 50µA | 44nC @ 10V | ±20V | 3400pF @ 30V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 33A D2PAK |
5,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
8,532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 5.7A TO220 |
6,588 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
3,384 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | - | 10V | 400mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | Super Junction | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N CH 100V 35A DPAK |
8,298 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 28.5mOhm @ 21A, 10V | 4V @ 50µA | 59nC @ 10V | ±20V | 1690pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252 |
4,626 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 31A 8TSDSON |
6,966 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 40A (Tc) | 4.5V, 10V | 1.45mOhm @ 20A, 10V | 2V @ 250µA | 33nC @ 10V | ±16V | 2300pF @ 12V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4,158 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 72A (Tc) | 10V | 9.1mOhm @ 70A, 10V | 4V @ 120µA | 70nC @ 10V | ±20V | 4810pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |