Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 82/225
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK |
4,680 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3130pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
LOW POWER_LEGACY |
3,508 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 55V 77A TO263-3 |
5,688 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 77A (Tc) | 10V | 11.7mOhm @ 38A, 10V | 4V @ 93µA | 60nC @ 10V | ±20V | 1770pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
8,712 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 100V 15A TO220-3 |
3,978 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48nC @ 10V | ±20V | 1280pF @ 25V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V D2-PAK AUTO |
7,434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 82A D2PAK |
8,784 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 3820pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3-1 |
5,400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.3mOhm @ 80A, 10V | 2.2V @ 35µA | 60nC @ 10V | +20V, -16V | 4690pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
4,356 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 3400pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
8,046 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 32A (Tc) | 8V, 10V | 30mOhm @ 16A, 10V | 4.6V @ 32µA | 13nC @ 10V | ±20V | 950pF @ 75V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 61A TO220AB |
5,256 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 100A TO252-3-11 |
5,922 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3.5mOhm @ 100A, 10V | 4V @ 90µA | 128nC @ 10V | ±20V | 10400pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 500V 7.1A TO-220 |
8,226 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
7,506 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
6,066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | ±20V | 13000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 33A DPAK |
3,456 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 33A (Tc) | 10V | 42mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 30V 13A 8-SO |
7,362 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V | 11mOhm @ 7A, 4.5V | 3V @ 250µA | 31nC @ 5V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO220AB |
5,868 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A IPAK |
6,552 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | ±20V | 3171pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
3,366 |
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CoolMOS™ | - | - | 600V | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 140A D2PAK |
7,542 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 5.5mOhm @ 71A, 10V | 1V @ 250µA | 76nC @ 4.5V | ±16V | 3720pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
3,762 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 35A TO220-FP |
8,964 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 6V, 10V | 12.6mOhm @ 35A, 10V | 3.5V @ 45µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262 |
7,290 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4555pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO252-3 |
7,254 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 5mOhm @ 40A, 10V | 3.8V @ 84µA | 64nC @ 10V | ±20V | 4700pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3 |
3,888 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.8mOhm @ 80A, 10V | 4V @ 90µA | 80nC @ 10V | ±20V | 5200pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A IPAK |
4,392 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 1.98mOhm @ 90A, 10V | 3.9V @ 100µA | 155nC @ 10V | ±20V | 5171pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO220-3 |
5,472 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 10V | 9.4mOhm @ 45A, 10V | 4V @ 34µA | 47nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 40A TO220-3 |
7,308 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 10mOhm @ 40A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 200V 24A DPAK |
2,448 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38nC @ 10V | ±20V | 1710pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |