Infineon Technologies 트랜지스터-FET, MOSFET-단일
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
필터보기
필터 재설정
필터 적용
카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 86/225
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N CH 75V 62A D2PAK |
8,100 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 62A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3270pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 179A DIRECTFET |
5,886 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 68A (Tc) | 10V | 7mOhm @ 41A, 10V | 4.9V @ 150µA | 53nC @ 10V | ±20V | 2170pF @ 25V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M4 | DirectFET™ Isometric M4 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
4,680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
TRENCH >=100V |
7,470 |
|
OptiMOS™ 5 | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Ta), 100A (Tc) | 6V, 10V | 5mOhm @ 50A, 10V | 3.8V @ 72µA | 61nC @ 10V | ±20V | 4300pF @ 50V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 86A TO-220AB |
8,856 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 10.6A TO220 |
4,068 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 179A DIRECTFET |
6,210 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 108A (Tc) | 10V | 3mOhm @ 65A, 10V | 4V @ 150µA | 108nC @ 10V | ±20V | 4267pF @ 25V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M4 | DirectFET™ Isometric M4 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO252-3 |
7,488 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_100+ |
6,336 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_100+ |
3,078 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_100+ |
2,736 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_100+ |
3,544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-3 |
3,960 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.7mOhm @ 100A, 10V | 2.2V @ 110µA | 190nC @ 10V | +20V, -16V | 14560pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 80A TO220-3 |
5,148 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 6.2mOhm @ 73A, 10V | 3.8V @ 70µA | 55nC @ 10V | ±20V | 3840pF @ 37.5V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 80A TO262-3 |
8,424 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 11A TO-263-3 |
5,778 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 10.6A TO262 |
4,230 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO252-3 |
8,136 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 5.3mOhm @ 90A, 10V | 4V @ 90µA | 68nC @ 10V | ±20V | 4800pF @ 25V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 70A TO220-3 |
2,214 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 80nC @ 10V | ±20V | 5550pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
6,552 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-3 |
6,084 |
|
CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 75A TO220 |
7,866 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3000pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 180A TO263-7-3 |
3,834 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 180A (Tc) | 4.5V, 10V | 1.05mOhm @ 100A, 10V | 2.2V @ 140µA | 239nC @ 10V | ±16V | 17600pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7,434 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
4,230 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 10.7mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 183A TO262 |
8,316 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270nC @ 10V | ±20V | 10150pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 4VSON |
8,244 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 19.2A (Tc) | 10V | 210mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37nC @ 10V | ±20V | 1750pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
|
|
|
Infineon Technologies |
MOSFET N-CH TO263-7 |
3,690 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 140A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 100µA | 80nC @ 10V | ±20V | 5500pF @ 25V | - | 161W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 36A D2PAK |
5,580 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1770pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 120A TO262 |
3,562 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | ±20V | 5193pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |