Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 9/225
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설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 100V 130A TO-220AB |
33,432 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250nC @ 10V | ±20V | 7670pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220AB |
17,412 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 240A D2PAK7 |
18,042 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 10V | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8850pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 200V 65A TO-220AB |
24,816 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 65A (Tc) | 10V | 24mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 40V 120A TO220-3 |
79,350 |
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Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 3.4mOhm @ 100A, 10V | 2.2V @ 340µA | 234nC @ 10V | ±16V | 15000pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 100A TO263-3 |
290,106 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 7.2mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 5470pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET_(75V,120V( |
22,458 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 260A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 210µA | 166nC @ 10V | ±20V | 11830pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 75V 230A D2PAK |
108,726 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9370pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 60V 80A TO-220 |
13,524 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | ±20V | 5033pF @ 25V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO263 |
23,394 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO263-3 |
22,764 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.8V @ 270µA | 210nC @ 10V | ±20V | 15600pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 300A 8HSOF |
71,916 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 300A (Tc) | 6V, 10V | 0.75mOhm @ 150A, 10V | 3.3V @ 280µA | 287nC @ 10V | ±20V | 16000pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-247AC |
9,768 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 280W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-220AB |
28,974 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 9620pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK-7 |
71,544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 279µA | 210nC @ 10V | ±20V | 15600pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO263-3 |
18,468 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 89nC @ 10V | ±20V | 7000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB |
24,594 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 26A TO220-3 |
18,216 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 120mOhm @ 8.2A, 10V | 4V @ 410µA | 36nC @ 10V | ±20V | 1544pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO263-3 |
22,164 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 195A TO-220AB |
17,904 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 80V 300A 8HSOF |
29,388 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 150A, 10V | 3.8V @ 280µA | 223nC @ 10V | ±20V | 17000pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 135V 160A |
18,450 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 135V | 160A (Tc) | 10V | 5.9mOhm @ 96A, 10V | 4V @ 250µA | 315nC @ 10V | ±20V | 11690pF @ 50V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) Variant |
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Infineon Technologies |
MOSFET N-CH 150V 78A TO-247AC |
12,522 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 78A (Tc) | 10V | 15.5mOhm @ 33A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4460pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 150V 174A TO263-7 |
23,268 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 174A (Tc) | 8V, 10V | 4.4mOhm @ 87A, 10V | 4.6V @ 264µA | 100nC @ 10V | ±20V | 8000pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N-CH 100V 300A 8HSOF |
255,786 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 6V, 10V | 1.5mOhm @ 150A, 10V | 3.8V @ 250µA | 211nC @ 10V | ±20V | 16000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO263-3 |
16,692 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO-220AB |
30,720 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO-220AB |
35,268 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2320pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 37A TO220-FP |
22,488 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 37A (Tc) | 8V, 10V | 10.5mOhm @ 37A, 10V | 4V @ 160µA | 55nC @ 10V | ±20V | 4300pF @ 75V | - | 40.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO220-3 |
17,898 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-31 Full Pack | TO-220-3 Full Pack |