Infineon Technologies 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Infineon Technologies
기록 6,749
페이지 96/225
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3 |
6,426 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5660pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 13A TO-247 |
8,874 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36nC @ 10V | ±20V | 1420pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 206A SUPER-220 |
7,020 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 300W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | SUPER-220™ (TO-273AA) | TO-273AA |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4,608 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 125mOhm @ 8.9A, 10V | 4V @ 440µA | 35nC @ 10V | ±20V | 1670pF @ 400V | - | 101W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 550V 23A TO-263 |
4,176 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO220-3 |
8,604 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63nC @ 10V | ±20V | 1600pF @ 25V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
5,994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.8mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 315A DIRECTFET |
7,434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 130A (Tc) | 10V | 1.6mOhm @ 109A, 10V | 4V @ 250µA | 194nC @ 10V | ±20V | 7471pF @ 25V | - | 3.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L6 | DirectFET™ Isometric L6 |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
501 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
4,338 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MV POWER MOS |
5,760 |
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Infineon Technologies |
MOSFET N-CH 24V 240A D2PAK-7 |
6,012 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 240A (Tc) | - | 1mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | - | 7700pF @ 19V | - | - | - | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 200V 43A TO-262-3 |
3,312 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 43A (Tc) | - | 54mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | - | 2900pF @ 25V | - | - | - | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 80V 1A SAWN ON FOIL |
6,480 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
2,160 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3 |
5,418 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | ±20V | 11570pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 1A SAWN ON FOIL |
6,192 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.8V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
3,330 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.87mOhm @ 100A, 10V | 4V @ 230µA | 290nC @ 10V | ±20V | 23000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 55V 35A TO220-5 |
6,372 |
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TEMPFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 13mOhm @ 19A, 10V | 2V @ 130µA | 130nC @ 10V | ±20V | 2660pF @ 25V | Temperature Sensing Diode | 170W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | PG-TO220-5-12 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 30V 235A D2PAK |
3,562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 560V 21A I2PAK |
4,536 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
8,406 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 1A SAWN ON FOIL |
5,760 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 302µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET N-CH 560V 21A TO220FP |
7,182 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 21A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 95nC @ 10V | ±20V | 2400pF @ 25V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 74A TO-262 |
3,492 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 20mOhm @ 42A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3500pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262 |
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Infineon Technologies |
MOSFET P-CH 60V TO263-3 |
4,662 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 11mOhm @ 100A, 10V | 2V @ 5.55mA | 281nC @ 10V | ±20V | 8500pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
5,868 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET NCH 135V 129A D2PAK |
2,772 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 135V | 129A (Tc) | 10V | 8.4mOhm @ 77A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 9700pF @ 50V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
3,096 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.8V @ 154µA | 123nC @ 10V | ±20V | 8970pF @ 40V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,200 |
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