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ON Semiconductor 트랜지스터-양극 (BJT)-단일, 사전 바이어스

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카테고리반도체 / 트랜지스터 / 트랜지스터-양극 (BJT)-단일, 사전 바이어스
제조업체ON Semiconductor
기록 591
페이지 14/20
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
트랜지스터 유형
전류-수집기 (Ic) (최대)
전압-수집기 이미 터 고장 (최대)
저항-베이스 (R1)
저항-이미 터베이스 (R2)
DC 전류 이득 (hFE) (최소) @ Ic, Vce
Vce 포화 (최대) @ Ib, Ic
전류-수집기 차단 (최대)
주파수-전환
전력-최대
장착 유형
패키지 / 케이스
공급자 장치 패키지
FJN4312RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4,806
-
PNP - Pre-Biased
100mA
40V
47 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4314RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4,374
-
PNP - Pre-Biased
100mA
50V
4.7 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4308RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
2,034
-
PNP - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4307RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
2,358
-
PNP - Pre-Biased
100mA
50V
22 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN3302RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
8,820
-
NPN - Pre-Biased
100mA
50V
10 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4308RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
7,848
-
PNP - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4310RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4,824
-
PNP - Pre-Biased
100mA
40V
10 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4313RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
6,696
-
PNP - Pre-Biased
100mA
50V
2.2 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4306RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
3,186
-
PNP - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4304RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4,212
-
PNP - Pre-Biased
100mA
50V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4303RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
6,480
-
PNP - Pre-Biased
100mA
50V
22 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4307RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
8,172
-
PNP - Pre-Biased
100mA
50V
22 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4306RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
8,046
-
PNP - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN3306RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92-3
6,804
-
NPN - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJN4305RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
4,986
-
PNP - Pre-Biased
100mA
50V
4.7 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4301RBU
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
7,902
-
PNP - Pre-Biased
100mA
50V
4.7 kOhms
4.7 kOhms
20 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
FJN4304RTA
ON Semiconductor
TRANS PREBIAS PNP 300MW TO92-3
3,906
-
PNP - Pre-Biased
100mA
50V
47 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
200MHz
300mW
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
FJV3106RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
5,850
-
NPN - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3112RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
5,814
-
NPN - Pre-Biased
100mA
40V
47 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3111RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
3,222
-
NPN - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3109RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
4,680
-
NPN - Pre-Biased
100mA
40V
4.7 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3107RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
2,538
-
NPN - Pre-Biased
100mA
50V
22 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJV3108RMTF
ON Semiconductor
TRANS PREBIAS NPN 200MW SOT23-3
4,788
-
NPN - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
200mW
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
FJNS3208RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3,996
-
NPN - Pre-Biased
100mA
50V
47 kOhms
22 kOhms
56 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3206RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3,222
-
NPN - Pre-Biased
100mA
50V
10 kOhms
47 kOhms
68 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3211RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
2,160
-
NPN - Pre-Biased
100mA
40V
22 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3215RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
6,858
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
10 kOhms
33 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3202RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
3,024
-
NPN - Pre-Biased
100mA
50V
10 kOhms
10 kOhms
30 @ 5mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3215RBU
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
5,238
-
NPN - Pre-Biased
100mA
50V
2.2 kOhms
10 kOhms
33 @ 10mA, 5V
300mV @ 500µA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
FJNS3210RTA
ON Semiconductor
TRANS PREBIAS NPN 300MW TO92S
7,452
-
NPN - Pre-Biased
100mA
40V
10 kOhms
-
100 @ 1mA, 5V
300mV @ 1mA, 10mA
100nA (ICBO)
250MHz
300mW
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S