Renesas Electronics America 트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
제조업체Renesas Electronics America
기록 485
페이지 15/17
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics America |
TRANSISTOR |
5,670 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
7,290 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
6,192 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
2,952 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
4,284 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3,852 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
8,370 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3,942 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3,294 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
6,426 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3,186 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3,942 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3,438 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
2,070 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
5,544 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
8,928 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
4,230 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
6,066 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
2,934 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
MOSFET P-CH 30V TSMT |
7,812 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 2.5V, 4.5V | 119mOhm @ 1A, 4.5V | 1.5V @ 1mA | 5.2nC @ 4.5V | ±12V | 450pF @ 10V | - | 200mW (Ta) | 150°C | Surface Mount | SC-96-3, Thin Mini Mold | SC-96 |
|
|
|
Renesas Electronics America |
TRANS N-CH CMPAK-4 |
5,328 |
|
- | N-Channel | MOSFET (Metal Oxide) | 43V | 1A (Ta) | 4V, 10V | 195mOhm @ 500mA, 10V | 2.5V @ 1mA | 4nC @ 10V | ±20V | 230pF @ 10V | - | 200mW (Ta) | 150°C | Surface Mount | SC-96-3, Thin Mini Mold | SC-96 |
|
|
|
Renesas Electronics America |
MOSFET N-CH HS SW TO-263 |
2,718 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
MOSFET N-CH HS SW TO-263 |
7,956 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
MOSFET P-CH SOP8 |
7,776 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 12mOhm @ 7A, 10V | 2.5V @ 1mA | 64nC @ 10V | ±20V | 3500pF @ 10V | - | 2.5W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Renesas Electronics America |
MOSFET P-CH SMD |
7,254 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 52mOhm @ 1.5A, 4.5V | 1.2V @ 1mA | 16nC @ 4.5V | ±8V | 1380pF @ 10V | - | 900mW (Ta) | 150°C | Surface Mount | 6-CMFPAK | 6-SMD, Flat Leads |
|
|
|
Renesas Electronics America |
MOSFET P-CH SOP8 |
3,436 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.5V @ 1mA | 125nC @ 10V | +10V, -20V | 5600pF @ 10V | - | 30W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH SOP8 |
2,088 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | 4V, 10V | 38mOhm @ 4A, 10V | 2.2V @ 1mA | - | ±20V | 740pF @ 10V | - | 2.5W (Ta) | 150°C | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
5,868 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 55A (Ta) | 4.5V, 10V | 3.3mOhm @ 27.5A, 10V | 2.5V @ 1mA | 33nC @ 4.5V | ±20V | 5180pF @ 10V | - | 30W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
8,658 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3.8mOhm @ 22.5A, 10V | 2.5V @ 1mA | 27nC @ 4.5V | ±20V | 4400pF @ 10V | - | 25W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |
|
|
|
Renesas Electronics America |
MOSFET N-CH LFPAK-5 |
4,446 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 7.9mOhm @ 15A, 10V | 2.5V @ 1mA | 11nC @ 4.5V | ±20V | 1730pF @ 10V | - | 15W (Tc) | 150°C | Surface Mount | 5-LFPAK | SC-100, SOT-669 |