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이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
V8P10-M3/87A
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 8A TO277A
123,996
eSMP®, TMBS®
Schottky
100V
8A
680mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
70µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
PMEG45U10EPDZ
Nexperia
DIODE SCHOTTKY 45V 10A CFP15
128,250
-
Schottky
45V
10A
490mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
34ns
600µA @ 45V
1170pF @ 1V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
CFP15
150°C (Max)
DST1045S
Littelfuse
DIODE SCHOTTKY 10A 45V TO-277B
53,118
-
Schottky
45V
10A
570mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 45V
639pF @ 5V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
AS4PM-M3/86A
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 1KV 2.4A TO277
12,252
eSMP®
Avalanche
1000V
2.4A (DC)
962mV @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
10µA @ 1000V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
STPS340B-TR
STMicroelectronics
DIODE SCHOTTKY 40V 3A DPAK
104,112
-
Schottky
40V
3A
630mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 40V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (Max)
TSP15H200S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 15A TO277A
51,354
-
Schottky
200V
15A
890mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
TSP15H120S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 15A TO277A
12,690
-
Schottky
120V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
DSTD5200
Littelfuse
DIODE SCHOTTKY 5A 200V TO-252
20,304
-
Schottky
200V
5A
900mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 200V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
-55°C ~ 150°C
MURHD560T4G
ON Semiconductor
DIODE GEN PURP 600V 5A DPAK
312
-
Standard
600V
5A
2.7V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 175°C
RHRD660S9A
ON Semiconductor
DIODE GEN PURP 600V 6A TO252-3
88,932
-
Standard
600V
6A
2.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
100µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-55°C ~ 175°C
RS3BB-13-F
Diodes Incorporated
DIODE GEN PURP 100V 3A SMB
25,014
-
Standard
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
BYV25D-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 5A DPAK
23,388
-
Standard
600V
5A
1.3V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (Max)
RS3B-E3/57T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 3A DO214AB
2,140
-
Standard
100V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 100V
44pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3K-E3/57T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 3A DO214AB
47,310
-
Standard
800V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
10µA @ 800V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
RS3J-E3/57T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 3A DO214AB
23,610
-
Standard
600V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
STTH3L06
STMicroelectronics
DIODE GEN PURP 600V 3A DO201AD
53,214
-
Standard
600V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
3µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
175°C (Max)
TSP10U100S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 10A TO277A
545,040
-
Schottky
100V
10A
680mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
TSP10U120S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 10A TO277A
25,566
-
Schottky
120V
10A
780mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
VS-6ESH02HM3/86A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 6A TO277A
14,922
Automotive, AEC-Q101, FRED Pt®
Standard
200V
6A
940mV @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
22ns
2µA @ 200V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-65°C ~ 175°C
SS3H10HE3_B/H
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 3A DO214AB
30,798
Automotive, AEC-Q101
Schottky
100V
3A
800mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
20µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-65°C ~ 175°C
VS-6EWH06FNTR-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 6A DPAK
33,060
FRED Pt®
Standard
600V
6A
2.1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
27ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
VS-6EWL06FNTR-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 6A DPAK
16,518
FRED Pt®
Standard
600V
6A
1.25V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
154ns
5µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-PAK (TO-252AA)
-65°C ~ 175°C
TPMR10D S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 10A TO277A
145,020
-
Standard
200V
10A
950mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
140pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TSP10U45S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 10A TO277A
38,214
-
Schottky
45V
10A
460mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
DST10100S
Littelfuse
DIODE SCHOTTKY 10A 100V TO-277B
279,834
-
Schottky
100V
10A
700mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277B
-55°C ~ 150°C
TPMR10G S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A TO277A
12,432
-
Standard
400V
10A
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
140pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
CMSH2-100 TR13
Central Semiconductor Corp
DIODE SCHOTTKY 100V 2A SMB
88,914
-
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
120pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 150°C
V20DL45-M3/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V 20A TO263AC
28,866
eSMP®, TMBS®
Schottky
45V
20A
640mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.5mA @ 45V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-40°C ~ 150°C
TPMR10J S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 10A TO277A
50,856
-
Standard
600V
10A
1.8V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 600V
140pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TSP12U120S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 12A TO277A
183,348
-
Schottky
120V
12A
780mV @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C