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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 116/1165
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
DIODE GEN PURP 400V 8A TO220AC |
15,492 |
|
- | Standard | 400V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
12,774 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220-2 |
52,692 |
|
FRED Pt® | Standard | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 8A TO220AC |
25,980 |
|
- | Standard | 400V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 5A DPAK |
383,712 |
|
- | Schottky | 100V | 5A | 730mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 40A TO220AC |
15,156 |
|
TMBS® | Schottky | 45V | 40A (DC) | 670mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | 200°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220FP |
31,956 |
|
- | Standard | 1200V | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 1200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1KV 8A TO220AC |
20,394 |
|
- | Standard | 1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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|
ON Semiconductor |
DIODE GEN PURP 400V 20A TO220F |
28,014 |
|
- | Standard | 400V | 20A | 1.4V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -55°C ~ 150°C |
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STMicroelectronics |
DIODE GEN PURP 200V 12A TO220AC |
19,392 |
|
- | Standard | 200V | 12A | 1.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 16A ITO220AC |
21,660 |
|
- | Standard | 600V | 16A | 1.5V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 4A TO220-2 |
7,956 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 13.5A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 251pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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|
Power Integrations |
DIODE GEN PURP 600V 20A TO220AC |
33,858 |
|
Qspeed™ | Standard | 600V | 20A | 3.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 26.5ns | 250µA @ 600V | 92pF @ 10V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 4A TO220-2 |
13,194 |
|
- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Through Hole | TO-220-2 | - | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 20A TO220FP |
24,438 |
|
- | Standard | 400V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 20µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
|
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|
STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220AC |
13,656 |
|
Automotive, AEC-Q101 | Standard | 1000V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 10µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 12A TO220AC |
16,248 |
|
- | Standard | 600V | 12A | 2.9V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 45µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
12,414 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220NFM | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
14,076 |
|
- | Standard | 600V | 8A | 1.85V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 8µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 20A TO220AC |
13,962 |
|
- | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Microsemi |
DIODE GEN PURP 600V 30A TO247 |
15,276 |
|
- | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
14,556 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2 |
24,138 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.65V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 182pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | 175°C (Max) |
|
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STMicroelectronics |
DIODE GEN PURP 600V 5A TO220AC |
13,098 |
|
- | Standard | 600V | 5A | 3.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 6µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
|
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|
ON Semiconductor |
DIODE GEN PURP 600V 60A TO247 |
17,334 |
|
- | Standard | 600V | 60A | 1.7V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
98,628 |
|
FRED Pt® | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 1.2KV 30A DO247 |
15,876 |
|
- | Standard | 1200V | 30A | 2.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
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Microsemi |
DIODE GEN PURP 1KV 30A TO247 |
6,540 |
|
- | Standard | 1000V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 295ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AD |
16,860 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 400V 30A D2PAK |
20,328 |
|
- | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |