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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 1164/1165
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SS24-7002E3/5BT
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY SMA
8,010
-
Schottky
40V
2A
550mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SX079S045S6PU
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V
7,416
-
-
-
-
-
-
-
-
-
-
-
-
-
SX081H150A6OU
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 150V
2,304
-
Schottky
150V
5A (DC)
880mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 150V
-
Surface Mount
Die
Die
-65°C ~ 175°C
SX110S040A6OB-01
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V
4,536
-
-
-
-
-
-
-
-
-
-
-
-
-
SX110S040S6OU
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V
2,268
-
-
-
-
-
-
-
-
-
-
-
-
-
BYWE29-150-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V TO220AC
6,570
-
Standard
150V
8A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 150V
45pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
BYWE29-50-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V TO220AC
4,482
-
Standard
50V
8A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 50V
45pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
CUD10-02 BK
Central Semiconductor Corp
DIODE GEN PURP 10A 200V DPAK
5,292
-
Standard
200V
10A
950mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-02 TR13
Central Semiconductor Corp
DIODE GEN PURP 10A 200V DPAK
5,580
-
Standard
200V
10A
950mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-04 BK
Central Semiconductor Corp
DIODE GEN PURP 10A 400V DPAK
7,254
-
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-04 TR13
Central Semiconductor Corp
DIODE GEN PURP 10A 400V DPAK
4,212
-
Standard
400V
10A
1.3V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CUD10-06 BK
Central Semiconductor Corp
DIODE GEN PURP 10A 600V DPAK
6,858
-
Standard
600V
10A
1.7V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
62pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 150°C
CPD93V-1N3600-CT
Central Semiconductor Corp
SWITCHING DIODE
3,222
*
-
-
-
-
-
-
-
-
-
-
-
-
CPD93V-1N3600-WN
Central Semiconductor Corp
SWITCHING DIODE
4,878
*
-
-
-
-
-
-
-
-
-
-
-
-
CPD93V-1N4150-CT
Central Semiconductor Corp
SWITCHING DIODE
3,204
*
-
-
-
-
-
-
-
-
-
-
-
-
CPD93V-1N4150-WN
Central Semiconductor Corp
SWITCHING DIODE
7,614
*
-
-
-
-
-
-
-
-
-
-
-
-
STPS20LCD200CBTR
STMicroelectronics
DIODE SCHOTTKY 200V DPAK
3,526
*
-
-
-
-
-
-
-
-
-
-
-
-
STPS20LCD80CB-TR
STMicroelectronics
DIODE SCHOTTKY 80V DPAK
7,470
*
-
-
-
-
-
-
-
-
-
-
-
-
1H85-MMBD3070
ON Semiconductor
DIODE ULT FAST SOT23
7,794
*
-
-
-
-
-
-
-
-
-
-
-
-
1P85-D1P001D
ON Semiconductor
DIODE ULT FAST SOT23
3,294
*
-
-
-
-
-
-
-
-
-
-
-
-
1P85-MMBD4148
ON Semiconductor
DIODE ULT FAST SOT23
8,514
*
-
-
-
-
-
-
-
-
-
-
-
-
DSF01S30SC,L3F
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 100MA SC2
2,826
-
Schottky
30V
100mA
500mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
50µA @ 30V
9.3pF @ 0V, 1MHz
Surface Mount
0201 (0603 Metric)
SC2
125°C (Max)
BY229-600,127
NXP
DIODE GEN PURP 500V 8A TO220AC
5,112
-
Standard
500V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 500V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
BY229X-200,127
NXP
DIODE GEN PURP 150V 8A TO220F
6,138
-
Standard
150V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 150V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY229X-600,127
NXP
DIODE GEN PURP 500V 8A TO220F
5,796
-
Standard
500V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 500V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY229X-800,127
NXP
DIODE GEN PURP 600V 8A TO220F
6,930
-
Standard
600V
8A
1.85V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
135ns
400µA @ 600V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
1PS59SB10,115
NXP
DIODE SCHOTTKY 30V 200MA SMT3
6,570
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
125°C (Max)
PMEG2010AEK,115
NXP
DIODE SCHOTTKY 20V 1A SMT3
5,202
-
Schottky
20V
1A (DC)
450mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
70pF @ 5V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SMT3; MPAK
150°C (Max)
BY329X-1500S,127
NXP
DIODE GEN PURP 1.5KV 6A TO220F
6,732
-
Standard
1500V
6A (DC)
1.6V @ 6.5A
Fast Recovery =< 500ns, > 200mA (Io)
160ns
250µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)
BY359X-1500S,127
NXP
DIODE GEN PURP 1.5KV 7A TO220F
3,580
-
Standard
1500V
7A (DC)
2V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
350ns
100µA @ 1300V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FP
150°C (Max)