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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 120/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN PURP 200V 40A DO5 |
6,408 |
|
- | Standard | 200V | 40A | 1.1V @ 40A | - | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 3A AXIAL |
15 |
|
- | Standard | 1000V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
8,772 |
|
- | Standard, Reverse Polarity | 600V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 85A DO203AB |
8,052 |
|
- | Standard | 600V | 85A | 1.2V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 60A TO247AC |
16,932 |
|
- | Standard | 1600V | 60A | 1.15V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 50V 33MA DO213AA |
8,220 |
|
- | Schottky | 50V | 33mA | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 80A TO247AC |
14,940 |
|
- | Standard | 800V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 15A TO220AC |
560 |
|
- | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.6V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 1200V | 790pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
82 |
|
HEXFRED® | Standard | 1200V | 30A | 4.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 170ns | 40µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 1.4KV 85A DO5 |
6,660 |
|
- | Standard, Reverse Polarity | 1400V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
7,091 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 43.5A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1200pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 1200V 20A TO220-2 |
1,466 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 20A (DC) | 1.6V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 1060pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY REV 60V DO4 |
8,172 |
|
- | Schottky, Reverse Polarity | 60V | 35A | 750mV @ 35A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 20V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 250V 200MA SOD323 |
21,666 |
|
- | Standard | 250V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323F | -65°C ~ 150°C |
|
|
|
Panasonic Electronic Components |
DIODE SCHOTTKY 30V 100MA SMINI3 |
29,052 |
|
- | Schottky | 30V | 100mA | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 800ps | 15µA @ 30V | 2pF @ 10V, 1MHz | Surface Mount | SC-85 | SMini3-F2-B | 125°C (Max) |
|
|
|
Nexperia |
DIODE SCHOTTKY 40V 0.2A SOD962 |
154,386 |
|
- | Schottky | 40V | 200mA | 525mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 1.25ns | 80µA @ 40V | 18pF @ 1V, 1MHz | Surface Mount | 0201 (0603 Metric) | DSN0603-2 | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 600V 1.0A DO-214AC |
368,064 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 600V | 6pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO204AL |
22,938 |
|
- | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO204AL |
118,326 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
|
Micro Commercial Co |
DIODE SCHOTTKY 40V 15MA SOD123 |
22,722 |
|
- | Schottky | 40V | 15mA (DC) | 900mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 125°C (Max) |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 60V 1A DO214AC |
36,108 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | 120pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.2A SOD123 |
96,120 |
|
- | Standard | 600V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 600V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SOD123W |
91,968 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123W |
100,272 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.2A SOD123 |
29,520 |
|
- | Standard | 800V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 800V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.2A SOD123 |
23,610 |
|
- | Standard | 800V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 800V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SOD123W |
26,886 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 800V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1.2A SOD123HE |
26,502 |
|
- | Standard | 1000V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 2A 800V DO-214AC SMA |
345,378 |
|
- | Standard | 800V | 1.6A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2.1µs | 5µA @ 800V | 11pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE GEN PURP 200V 1A DO41 |
52,344 |
|
- | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -55°C ~ 150°C |