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필터보기
필터 재설정
필터 적용
카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 124/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SMC Diode Solutions |
DIODE SCHOTTKY 100V DO201AD |
14,526 |
|
- | Schottky | 100V | - | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A DO214AC |
15,816 |
|
- | Standard | 300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Bourns |
DIODE GEN PURP 400V 1A 1408 |
200,010 |
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- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | Chip, Concave Terminals | 1408 | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A SOD123HE |
248,922 |
|
- | Schottky | 40V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 40V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A SOD123HE |
29,454 |
|
- | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 60V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A MICRO SMA |
81,756 |
|
- | Standard | 400V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 400V | 3pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A MICRO SMA |
27,894 |
|
- | Schottky | 30V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 50pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 1KV 1.5A DO214AC |
28,188 |
|
- | Avalanche | 1000V | 1.5A | 1.6V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 1000V | 13pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 1A DO214AC |
65,364 |
|
- | Schottky | 90V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO214AC |
14,892 |
|
- | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
17,370 |
|
- | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
2,000 |
|
- | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 40pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 2A SUB SMA |
231,822 |
|
- | Schottky | 90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 2A SUB SMA |
233,634 |
|
- | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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|
SMC Diode Solutions |
DIODE SCHOTTKY 60V DO201AD |
14,916 |
|
- | Schottky | 60V | - | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 400pF @ 5V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A MICRO SMA |
157,944 |
|
- | Schottky | 30V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SOD123HE |
26,214 |
|
- | Schottky | 150V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 150V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A DO214AC |
53,964 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
38,922 |
|
- | Standard | 150V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE AVALANCHE 1KV 1.5A DO214AC |
17,478 |
|
- | Avalanche | 1000V | 1.5A | 1.6V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 1000V | 13pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A SUB SMA |
46,668 |
|
- | Schottky | 150V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO220AA |
27,216 |
|
eSMP® | Standard | 600V | 1A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 5µA @ 600V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
14,604 |
|
- | Standard | 200V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO214AC |
18,120 |
|
- | Standard | 800V | 1.5A | 1.7V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO214AC |
14,244 |
|
- | Standard | 800V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A SOD123W |
81,204 |
|
- | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO214AC |
47,832 |
|
- | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
18,516 |
|
- | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A SOD123W |
24,342 |
|
- | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1.5A DO220AA |
56,910 |
|
eSMP® | Standard | 100V | 1.5A | 1.05V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 900ns | 5µA @ 100V | 9.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |