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다이오드 유형

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전압-DC 역방향 (Vr) (최대)

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전류-평균 정류 (Io)

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전압-순방향 (Vf) (최대) @ If

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속도

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역 복구 시간 (trr)

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전류-역방향 누설 @ Vr

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커패시턴스 @ Vr, F

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장착 유형

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패키지 / 케이스

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공급자 장치 패키지

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글

기록 34,936

페이지 418/1165

부품 번호	제조업체	설명	재고 있음	시리즈	다이오드 유형	전압-DC 역방향 (Vr) (최대)	전류-평균 정류 (Io)	전압-순방향 (Vf) (최대) @ If	속도	역 복구 시간 (trr)	전류-역방향 누설 @ Vr	커패시턴스 @ Vr, F	장착 유형	패키지 / 케이스	공급자 장치 패키지	작동 온도-접합
UF4005-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	3,562	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4006-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL	3,672	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF4006-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL	6,912	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
ACGRAT104L-HF	Comchip Technology	DIODE GEN PURP 800V 1A 2010	6,966	Automotive, AEC-Q101	Standard	800V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	8pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2010	-65°C ~ 175°C
B150BQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 50V 1A SMB	4,896	Automotive, AEC-Q101	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	110pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
B160BQ-13-F	Diodes Incorporated	DIODE SCHOTTKY 60V 1A SMB	8,604	Automotive, AEC-Q101	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	110pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
ES1DAF	ON Semiconductor	DIODE GEN PURP 200V 1A DO214AD	2,952	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	34ns	1µA @ 200V	15pF @ 4V, 1MHz	Surface Mount	DO-214AD, SMAF	DO-214AD (SMAF)	-55°C ~ 150°C
CDBMTS1200-HF	Comchip Technology	DIODE SCHOTTKY 200V 1A SOD123S	2,898	-	Schottky	200V	1A (DC)	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 200V	120pF @ 4V, 1MHz	Surface Mount	SOD-123S	SOD-123S	-55°C ~ 150°C
B245BE-13	Diodes Incorporated	DIODE SCHOTTKY 45V 2A SMB	3,708	-	Schottky	45V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	93pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
B270BE-13	Diodes Incorporated	DIODE SCHOTTKY 70V 2A SMB	4,158	-	Schottky	70V	2A	790mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	7µA @ 70V	70pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
CDBB140LR-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A DO214AA	3,942	-	Schottky	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	120pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-50°C ~ 150°C
S5A V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 5A DO214AB	3,150	-	Standard	50V	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5B V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	8,568	-	Standard	100V	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5D V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	3,384	-	Standard	200V	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5G V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 5A DO214AB	8,370	-	Standard	400V	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5J V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AB	3,598	-	Standard	600V	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5K V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	5,490	-	Standard	800V	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S5M V6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AB	2,304	-	Standard	-	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SSL12 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	8,190	-	Schottky	20V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SSL13 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	2,970	-	Schottky	30V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SSL14 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AC	8,694	-	Schottky	40V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SDM2L40P1-7	Diodes Incorporated	DIODE SCHOTTKY 40V 2A POWERDI123	2,790	-	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	63pF @ 10V, 1MHz	Surface Mount	POWERDI®123	PowerDI™ 123	-
B140HWQ-7	Diodes Incorporated	DIODE SCHOTTKY 40V 1A SOD123	8,334	Automotive, AEC-Q101	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 40V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 125°C
SBR3U40S1F-7	Diodes Incorporated	DIODE SBR 40V 3A SOD123	8,856	-	Super Barrier	40V	3A	490mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	180µA @ 40V	-	Surface Mount	SOD-123	SOD-123	-65°C ~ 150°C
BA157GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	4,104	SUPERECTIFIER®	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BA158GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	3,852	SUPERECTIFIER®	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BA159DGP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL	3,186	SUPERECTIFIER®	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
BY206GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 400MA DO204	3,888	SUPERECTIFIER®	Standard	300V	400mA	1.5V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1µs	2µA @ 300V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SE30PABHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO221BC	3,834	eSMP®	Standard	600V	3A	1.16V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.3µs	5µA @ 600V	13pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-55°C ~ 175°C
SE30PAB-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO221BC	4,104	eSMP®	Standard	600V	3A	1.16V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.3µs	5µA @ 600V	13pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-55°C ~ 175°C

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