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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 501/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Sanken |
DIODE SCHOTTKY 40V 1A AXIAL |
7,416 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 700MA AXIAL |
8,370 |
|
- | Schottky | 60V | 700mA | 620mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 700MA AXIAL |
6,714 |
|
- | Schottky | 60V | 700mA | 620mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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Sanken |
DIODE SCHOTTKY 90V 700MA AXIAL |
2,970 |
|
- | Schottky | 90V | 700mA | 810mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 90V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE SCHOTTKY 90V 700MA AXIAL |
2,574 |
|
- | Schottky | 90V | 700mA | 810mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 90V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A AXIAL |
2,196 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 1KV 500MA AXIAL |
3,906 |
|
- | Standard | 1000V | 500mA | 3.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 1KV 500MA AXIAL |
7,992 |
|
- | Standard | 1000V | 500mA | 3.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
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|
Sanken |
DIODE GEN PURP 600V 1.2A AXIAL |
8,748 |
|
- | Standard | 600V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 800V 1.2A AXIAL |
7,956 |
|
- | Standard | 800V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 400V 1.2A AXIAL |
2,736 |
|
- | Standard | 400V | 1.2A | 920mV @ 1.2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
6,372 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 5µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 1KV 200MA AXIAL |
3,816 |
|
- | Standard | 1000V | 200mA | 4V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 200ns | 5µA @ 1000V | - | Through Hole | Axial | - | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 40V 2A SJP |
5,958 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 60V 2A SJP |
8,478 |
|
- | Schottky | 60V | 2A | 690mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE SCHOTTKY 90V 2A SJP |
8,532 |
|
- | Schottky | 90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 90V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Sanken |
DIODE GEN PURP 200V 1A SJP |
7,650 |
|
- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 200V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 3A TO277A |
8,730 |
|
Automotive, AEC-Q101 | Schottky | 50V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE SBR 45V 10A POWERDI5 |
5,418 |
|
- | Super Barrier | 45V | 10A | 470mV @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE RECT SBR 45V 5A POWERDI5 |
5,526 |
|
SBR® | Super Barrier | 45V | 5A | 600mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Diodes Incorporated |
DIODE RECT SBR 45V 5A POWERDI5 |
4,752 |
|
SBR® | Super Barrier | 45V | 5A | 600mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 280µA @ 45V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 150V DO-214AB |
4,050 |
|
- | Schottky | 150V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 3A 200V DO-214AB |
6,462 |
|
- | Schottky | 200V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Bourns |
DIO RECT VRRM 400V 3A SMC |
2,268 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
|
|
|
Bourns |
DIO RECT VRRM 600V 3A SMC |
2,682 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 20V 5A PMDS |
5,184 |
|
- | Schottky | 20V | 5A | 390mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.5A SOD57 |
4,176 |
|
- | Avalanche | 400V | 1.5A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 400V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.4A SOD57 |
3,492 |
|
- | Avalanche | 200V | 1.4A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 1.9A SOD57 |
3,490 |
|
- | Avalanche | 50V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.25A SOD57 |
5,184 |
|
- | Avalanche | 200V | 1.25A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 200V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |