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필터보기
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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
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이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
DIODE SBR 45V 10A POWERDI 5 |
2,610 |
|
Automotive, AEC-Q101, SBR® | Super Barrier | 45V | 10A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 450µA @ 45V | 500pF @ 4V, 1MHz | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 16A TO220AC |
8,460 |
|
- | Schottky | 100V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 100V 15A POWERDI5 |
4,788 |
|
TrenchSBR | Super Barrier | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
8,946 |
|
- | Standard | 600V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 15A TO277A |
8,820 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 80V | 15A | 660mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO220AC |
5,022 |
|
- | Standard | 50V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO220AC |
5,130 |
|
- | Standard | 100V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
5,904 |
|
- | Standard | 200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
8,820 |
|
- | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO220AC |
6,264 |
|
- | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO262AA |
3,456 |
|
FRED Pt® | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -65°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC |
8,550 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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|
Bourns |
DIODE GEN PURP 400V 1A 1408 |
2,124 |
|
- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 400V | 12pF @ 4V, 1MHz | Surface Mount | Chip, Concave Terminals | 1408 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 6A TO-220 |
8,334 |
|
- | Schottky | 35V | 6A | 730mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 35V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 6A TO220AC |
7,326 |
|
- | Schottky | 40V | 6A | 730mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6A TO-220 |
8,298 |
|
- | Schottky | 45V | 6A | 730mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC |
2,646 |
|
- | Schottky | 35V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7.5A TO220AC |
4,842 |
|
- | Schottky | 45V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 8A TO220AC |
7,272 |
|
- | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
3,816 |
|
- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
3,024 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
8,604 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
6,480 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A DPAK |
3,906 |
|
- | Schottky | 45V | 10A | 630mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 760pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 175°C |
|
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|
ON Semiconductor |
10A 200V ULTRA FAST RECTIFIER |
5,310 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
|
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|
ON Semiconductor |
10A 400V ULTRA FAST RECTIFIER |
7,506 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | TO-277, 3-PowerDFN | TO-277-3 | - |
|
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
5,058 |
|
eSMP® | Avalanche | 800V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.4A TO277 |
6,894 |
|
eSMP® | Avalanche | 1000V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
3,240 |
|
eSMP® | Avalanche | 800V | 1.4A (DC) | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 3A DO214AB |
4,554 |
|
- | Schottky | 20V | 3A | 460mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 20V | - | Surface Mount | DO-214AB | DO-214AB | -55°C ~ 150°C |