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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 563/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A TO220AB |
8,154 |
|
- | Standard | 400V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
Infineon Technologies |
DIODE SCHOTTKY 4V 110MA SC79-2 |
4,770 |
|
- | Schottky | 4V | 110mA (DC) | 410mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 1V | 230pF @ 0V, 1MHz | Surface Mount | 0201 (0603 Metric) | PG-TSSLP-2-1 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A TO263AB |
5,670 |
|
Automotive, AEC-Q101 | Standard | 400V | 10A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 400V | 50pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
ON Semiconductor |
DIODE GEN PURP 650V DIE |
5,706 |
|
- | Standard | 650V | - | 2.8V @ 30A | - | - | 1µA @ 650V | - | Surface Mount | Die | Die | 175°C (Max) |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5.5A DPAK |
4,734 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5.5A | 460mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | 590pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5.5A DPAK |
8,766 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5.5A | 460mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | 590pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5.5A DPAK |
8,694 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5.5A | 460mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | 590pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5.5A DPAK |
4,374 |
|
Automotive, AEC-Q101 | Schottky | 30V | 5.5A | 460mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | 590pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
SMC Diode Solutions |
PIV 150V IO 5A CHIP SIZE 72MIL S |
5,040 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO220AC |
6,840 |
|
- | Standard | 300V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 12A TO277A |
2,100 |
|
eSMP® | Schottky | 40V | 12A | 600mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 40V | 750pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC |
7,920 |
|
Automotive, AEC-Q101 | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO263AB |
2,700 |
|
Automotive, AEC-Q101 | Schottky | 100V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 120V 12A 5DFN |
4,194 |
|
Automotive, AEC-Q101 | Schottky | 120V | 12A | 830mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 120V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
|
|
IXYS |
DIODE SCHOTTKY 25V 6A TO252AA |
2,214 |
|
- | Schottky | 25V | 6A | 400mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 6mA @ 25V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 35V 5A DO214AB |
7,686 |
|
- | Schottky | 35V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 35V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 40V 5A DO214AB |
6,012 |
|
- | Schottky | 40V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
|
|
Microsemi |
DIODE SCHOTTKY 45V 5A DO214AB |
4,086 |
|
- | Schottky | 45V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 3.5A SOD64 |
2,100 |
|
- | Avalanche | 50V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 3.5A SOD64 |
2,664 |
|
- | Avalanche | 50V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V TO-263AB |
6,894 |
|
- | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO220AC |
6,192 |
|
- | Schottky | 35V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | 600pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO220AC |
8,964 |
|
- | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 600pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
|
|
ON Semiconductor |
DIODE GEN PURP 650V DIE |
5,256 |
|
- | Standard | 650V | - | 2.8V @ 30A | - | - | 1µA @ 650V | - | Surface Mount | Die | Die | 175°C (Max) |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
4,464 |
|
Automotive, AEC-Q101 | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DPAK |
2,100 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 5A | 1.85V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DPAK |
7,434 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 5A | 1.85V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A DPAK |
8,046 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 5A | 1.85V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A D2PAK |
2,502 |
|
HEXFRED® | Standard | 600V | 4A (DC) | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 3µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A D2PAK |
7,920 |
|
HEXFRED® | Standard | 600V | 4A (DC) | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 3µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |