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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
기록 34,936
페이지 943/1165
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 다이오드 유형 | 전압-DC 역방향 (Vr) (최대) | 전류-평균 정류 (Io) | 전압-순방향 (Vf) (최대) @ If | 속도 | 역 복구 시간 (trr) | 전류-역방향 누설 @ Vr | 커패시턴스 @ Vr, F | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 | 작동 온도-접합 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor |
DIODE SCHOTTKY 1.5A 30V |
5,940 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 3A 30V |
2,574 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 30V 700MA PCP |
3,006 |
|
- | Schottky | 30V | 700mA | 550mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 80µA @ 15V | 26pF @ 10V, 1MHz | Surface Mount | TO-243AA | PCP | -55°C ~ 125°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 2A 30V CPH5 |
3,546 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Bourns |
DIODE GEN PURP 80V 100MA 1005 |
5,238 |
|
- | Standard | 80V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 80V | 4pF @ 1V, 100MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -40°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 9.4A TO257 |
7,542 |
|
- | Silicon Carbide Schottky | 1200V | 9.4A (DC) | 1.6V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 1200V | 884pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 1A TO276 |
4,122 |
|
- | Silicon Carbide Schottky | 650V | 1A | 1.5V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | Through Hole | TO-276AA | TO-276 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 4.3A TO276 |
5,904 |
|
- | Silicon Carbide Schottky | 650V | 4.3A (DC) | 1.65V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | Surface Mount | TO-276AA | TO-276 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 9.4A TO257 |
7,884 |
|
- | Silicon Carbide Schottky | 650V | 9.4A (DC) | 1.34V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 1107pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 14.6A TO276 |
4,428 |
|
- | Silicon Carbide Schottky | 650V | 14.6A (DC) | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 1107pF @ 1V, 1MHz | Surface Mount | TO-276AA | TO-276 | -55°C ~ 250°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 5A TO220AC |
5,724 |
|
- | Silicon Carbide Schottky | 1200V | 5A | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO204AC |
6,588 |
|
- | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO204AC |
2,736 |
|
- | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
4,032 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
5,616 |
|
eSMP®, TMBS® | Schottky | 100V | 10A | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 400V 5A POWERFLAT |
6,300 |
|
- | Standard | 400V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 2.5µA @ 400V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | 150°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 600V 3A SMB |
4,644 |
|
- | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
6,282 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
7,218 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
2,448 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
8,028 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
|
WeEn Semiconductors |
DIODE GEN PURP 600V 4A DO201AD |
6,372 |
|
- | Standard | 600V | 4A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1200V 10A TO220AC |
4,680 |
|
- | Silicon Carbide Schottky | 1200V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 1200V | 520pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A P600 |
5,850 |
|
- | Standard | 1000V | 10A | 1.05V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 1000V | 110pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2 |
7,020 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 340µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO220-2 |
4,374 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 160pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2 |
3,600 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 280µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3 |
5,112 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247-3 |
5,058 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 40A (DC) | 1.7V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 1.4mA @ 650V | 1140pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO220-2 |
4,788 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 700µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |