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카테고리반도체 / 메모리 IC / 기억

기록 46,590

페이지 1353/1553

부품 번호	제조업체	설명	재고 있음	시리즈	메모리 유형	메모리 포맷	기술	메모리 크기	메모리 인터페이스	시계 주파수	쓰기주기 시간-단어, 페이지	접근 시간	전압-공급	작동 온도	장착 유형	패키지 / 케이스	공급자 장치 패키지
MT53B512M64D4PV-053 WT:C TR	Micron Technology Inc.	IC DRAM 32G 1866MHZ FBGA	3,024	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4PV-062 WT ES:C TR	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	7,164	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4PV-062 WT:C TR	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA	4,230	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
PC28F256P30B2E	Micron Technology Inc.	IC FLASH 256M PARALLEL 52MHZ	4,122	StrataFlash™	Non-Volatile	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	52MHz	100ns	100ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	-	-	-
PC28F256P33B2E	Micron Technology Inc.	IC FLASH 256M PARALLEL 52MHZ	8,496	-	Non-Volatile	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	52MHz	85ns	85ns	2.3V ~ 3.6V	-40°C ~ 85°C (TC)	-	-	-
RC28F128J3F75G	Micron Technology Inc.	IC FLASH 128M PARALLEL 64EASYBGA	5,886	StrataFlash™	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8, 8M x 16)	Parallel	-	75ns	75ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
RC28F256P30T2E	Micron Technology Inc.	IC FLASH 256M PARALLEL 52MHZ	3,240	StrataFlash™	Non-Volatile	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	52MHz	100ns	100ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
EDF8164A3PD-GD-F-D	Micron Technology Inc.	IC DRAM 8G PARALLEL 800MHZ FBGA	2,304	-	Volatile	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	Parallel	800MHz	-	-	1.14V ~ 1.95V	-30°C ~ 85°C (TC)	-	-	-
MT28HL16GJBA3ERK-0SCT	Micron Technology Inc.	NOR FLASH 512MX32 PLASTIC 3.3V	2,124	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT28HL16GJBB3ERK-0SCT	Micron Technology Inc.	NOR FLASH 512MX32 PLASTIC 3.3V	6,858	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT28HL32GQBB3ERK-0SCT	Micron Technology Inc.	NOR FLASH 1GX32 PLASTIC 3.3V	8,028	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT53B256M64D2NL-062 XT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	3,708	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B256M64D2NL-062 XT:B TR	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA	7,650	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B2DANL-DC	Micron Technology Inc.	LPDDR4 16G 256MX64 FBGA DDP	7,956	-	Volatile	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT29E1HT08ELHBBG1-3ES:B TR	Micron Technology Inc.	IC FLASH 1.5T PARALLEL 272VBGA	2,466	-	Non-Volatile	FLASH	FLASH - NAND	1.5Tb (192G x 8)	Parallel	-	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-	-	-
MT29C1G12MAAIYAMR-5 AIT TR	Micron Technology Inc.	IC FLASH RAM 1G PARALLEL 200MHZ	3,114	-	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	1Gb (128M x 8)(NAND), 512M (16M x 32)(LPDRAM)	Parallel	200MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	130-VFBGA	130-VFBGA (8x9)
MT29C1G12MAAJVAKC-5 IT TR	Micron Technology Inc.	MCP 64MX16/32MX16 PLASTIC GREEN	4,806	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C2DBGM-DC TR	Micron Technology Inc.	MASSFLASH/LPDDR2 8G	3,544	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C3DAMF-DC TR	Micron Technology Inc.	MASSFLASH/LPDDR2 8G	8,190	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C3DBAN-DC TR	Micron Technology Inc.	MASSFLASH/LPDDR2 12G	4,014	*	-	-	-	-	-	-	-	-	-	-	-	-	-
MT29C4G48MAYBBAHK-48 AIT TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 208MHZ	3,960	-	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (512M x 8)(NAND), 2G (64M x 32)(LPDRAM)	Parallel	208MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	137-VFBGA	137-VFBGA (13x10.5)
MT29C4G96MAZBBCJV-48 IT TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 208MHZ	3,526	-	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (256M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)	Parallel	208MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
MT29C8G96MAZBBDKD-48 IT TR	Micron Technology Inc.	IC FLASH RAM 8G PARALLEL 208MHZ	7,650	-	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	8Gb (512M x 16)(NAND), 4G (128M x 32)(LPDRAM)	Parallel	208MHz	-	-	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	-	-	-
MT29E1HT08EMHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 1.5T PARALLEL 132VBGA	6,570	-	Non-Volatile	FLASH	FLASH - NAND	1.5Tb (192G x 8)	Parallel	-	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-	-	132-VBGA (12x18)
MT29E1T08CMHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ	5,256	-	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	333MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-	-	132-VBGA (12x18)
MT29E1T08CPCBBH8-6:B TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 167MHZ	7,884	-	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	167MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	152-LBGA	152-LBGA (14x18)
MT29E1T08CUCBBH8-6:B TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 167MHZ	2,016	-	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	167MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	-	-	152-LBGA (14x18)
MT29E1T208ECHBBJ4-3:B TR	Micron Technology Inc.	IC FLASH 1.125T PARALLEL 132VBGA	8,460	-	Non-Volatile	FLASH	FLASH - NAND	1.125Tb (144G x 8)	Parallel	-	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-	-	132-VBGA (12x18)
MT29E1T208ECHBBJ4-3ES:B TR	Micron Technology Inc.	IC FLASH 1.125T PARALLEL 132VBGA	5,184	-	Non-Volatile	FLASH	FLASH - NAND	1.125Tb (144G x 8)	Parallel	-	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	-	-	132-VBGA (12x18)
MT29E256G08CECBBH6-6:B TR	Micron Technology Inc.	IC FLASH 256G PARALLEL 167MHZ	8,514	-	Non-Volatile	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	152-VBGA	152-VBGA (14x18)

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