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카테고리반도체 / 메모리 IC / 기억
기록 46,590
페이지 464/1553
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설명 |
재고 있음 |
수량 |
시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cypress Semiconductor |
IC 128 MB FLASH MEMORY |
3,852 |
|
HyperRAM™ KL | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 128Mb (16M x 8) | Parallel | 100MHz | - | 40ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
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|
Cypress Semiconductor |
IC 128 MB FLASH MEMORY |
2,556 |
|
HyperRAM™ KS | Volatile | PSRAM | PSRAM (Pseudo SRAM) | 128Mb (16M x 8) | Parallel | 166MHz | - | 36ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 24-VBGA | 24-FBGA (6x8) |
|
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|
Winbond Electronics |
IC DRAM 512M PARALLEL 168WFBGA |
3,708 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 512Mb (16M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -25°C ~ 85°C (TC) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |
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|
Winbond Electronics |
IC DRAM 512M PARALLEL 168WFBGA |
5,994 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 512Mb (16M x 32) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |
|
|
|
Winbond Electronics |
IC DRAM 512M PARALLEL 168WFBGA |
2,772 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -25°C ~ 85°C (TC) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |
|
|
|
Winbond Electronics |
IC DRAM 512M PARALLEL 168WFBGA |
7,020 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 168-WFBGA | 168-WFBGA (12x12) |
|
|
|
Cypress Semiconductor |
128KB SERIAL I2C F-RAM 3VOLT 8 |
8,946 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 128Kb (16K x 8) | I²C | 3.4MHz | - | 130ns | 2V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
Micron Technology Inc. |
IC DRAM 4G PARALLEL 96FBGA |
7,020 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 1067MHz | - | 20ns | 1.283V ~ 1.45V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (8x14) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA |
2,694 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (128M x 8) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10.5) |
|
|
|
Cypress Semiconductor |
IC FLASH 128M PARALLEL 64BGA |
4,392 |
|
GL-P | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | Parallel | - | 90ns | 90ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
8,550 |
|
- | Volatile | DRAM | SDRAM | 64Mb (2M x 32) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
Micron Technology Inc. |
IC FLASH NAND 8G PAR TSOP |
7,020 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 8Gb (1G x 8) | Parallel | - | 20ns | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
|
Cypress Semiconductor |
IC FLASH 256M PARALLEL 64BGA |
6,282 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | - | 60ns | 100ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
|
|
Cypress Semiconductor |
IC FLASH 256M PARALLEL 64BGA |
2,808 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
|
|
Cypress Semiconductor |
IC FLASH 256M PARALLEL |
2,574 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | - | 60ns | 110ns | 1.65V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
4,014 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
3,150 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 133MHz | - | 6ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
8,316 |
|
- | Volatile | DRAM | SDRAM | 256Mb (16M x 16) | Parallel | 143MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 144LFBGA |
3,528 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (8M x 32) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Surface Mount | 144-LFBGA | 144-LFBGA (12x12) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 96TWBGA |
4,770 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (64M x 16) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-TWBGA (9x13) |
|
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|
Macronix |
IC FLASH 512MBIT |
3,996 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Macronix |
IC FLASH 512MBIT |
5,184 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Macronix |
IC FLASH 512MBIT |
5,670 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Macronix |
IC FLASH 512MBIT |
6,930 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Micron Technology Inc. |
IC FLASH 32G PARALLEL DIE |
6,786 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
|
|
|
Micron Technology Inc. |
IC FLASH 32G PARALLEL WAFER |
4,464 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
|
|
|
Micron Technology Inc. |
IC FLASH 32G PARALLEL |
6,876 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 32Gb (4G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | Die | Die |
|
|
|
Alliance Memory, Inc. |
IC DRAM 256M PARALLEL 86TSOP II |
8,532 |
|
- | Volatile | DRAM | SDRAM | 256Mb (8M x 32) | Parallel | 166MHz | - | 5.5ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 86-TFSOP (0.400", 10.16mm Width) | 86-TSOP II |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
5,220 |
|
- | Volatile | DRAM | SDRAM | 128Mb (4M x 32) | Parallel | 166MHz | - | 5.4ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 60TFBGA |
8,892 |
|
- | Volatile | DRAM | SDRAM - DDR | 256Mb (16M x 16) | Parallel | 166MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-TFBGA (13x8) |