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카테고리반도체 / 메모리 IC / 기억
기록 46,590
페이지 86/1553
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | 메모리 유형 | 메모리 포맷 | 기술 | 메모리 크기 | 메모리 인터페이스 | 시계 주파수 | 쓰기주기 시간-단어, 페이지 | 접근 시간 | 전압-공급 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Cypress Semiconductor |
IC FLASH 128M SPI 133MHZ 24BGA |
307,014 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-BGA (6x8) |
|
|
Cypress Semiconductor |
IC FLASH 32M PARALLEL 64BGA |
15,564 |
|
GL-N | Non-Volatile | FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 90ns | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
Cypress Semiconductor |
IC FLASH 32M PARALLEL 64BGA |
21,648 |
|
GL-N | Non-Volatile | FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 90ns | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
Winbond Electronics |
IC DRAM 256M PARALLEL 90VFBGA |
7,104 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 256Mb (8M x 32) | Parallel | 200MHz | 15ns | 5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-VFBGA (8x13) |
|
|
Cypress Semiconductor |
IC FLASH 64M SPI 108MHZ 8SOIC |
10,548 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 64Mb (8M x 8) | SPI - Quad I/O, QPI | 108MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
|
|
Cypress Semiconductor |
IC FLASH 128M SPI 108MHZ 8SO |
7,938 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 108MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
|
|
Insignis Technology Corporation |
IC SDRAM 1GBIT 933MHZ 78BGA |
26,160 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 1Gb (128M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-VFBGA | 78-FBGA (8x10.5) |
|
|
Insignis Technology Corporation |
IC DDR2 DRAM 1GBIT 333MHZ 84BGA |
21,750 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (64M x 16) | Parallel | 400MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Surface Mount | 84-TFBGA | 84-FBGA (8x12.5) |
|
|
Microchip Technology |
IC EEPROM 1M SPI 20MHZ 8DFN |
21,312 |
|
- | Non-Volatile | EEPROM | EEPROM | 1Mb (128K x 8) | SPI | 20MHz | 6ms | - | 2.5V ~ 5.5V | -40°C ~ 125°C (TA) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
Cypress Semiconductor |
IC FRAM 128K I2C 3.4MHZ 8SOIC |
120,623 |
|
F-RAM™ | Non-Volatile | FRAM | FRAM (Ferroelectric RAM) | 128Kb (16K x 8) | I²C | 3.4MHz | - | 130ns | 2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC EPROM 1M PARALLEL 32PLCC |
20,580 |
|
- | Non-Volatile | EPROM | EPROM - OTP | 1Mb (128K x 8) | Parallel | - | - | 90ns | 2.7V ~ 3.6V, 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 32-LCC (J-Lead) | 32-PLCC (13.97x11.43) |
|
|
Cypress Semiconductor |
IC FLASH 32M PARALLEL 64BGA |
20,124 |
|
GL-N | Non-Volatile | FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 90ns | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
Cypress Semiconductor |
IC FLASH 32M PARALLEL 64BGA |
2,171 |
|
GL-N | Non-Volatile | FLASH | FLASH - NOR | 32Mb (4M x 8, 2M x 16) | Parallel | - | 90ns | 90ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (13x11) |
|
|
Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 67VFBGA |
19,716 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
|
|
Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 67VFBGA |
7,920 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
|
|
Toshiba Memory America, Inc. |
IC FLASH 2G PARALLEL 67VFBGA |
197,921 |
|
- | Non-Volatile | FLASH | FLASH - NAND (SLC) | 2Gb (256M x 8) | Parallel | - | 25ns | 25ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 67-VFBGA | 67-VFBGA (6.5x8) |
|
|
Cypress Semiconductor |
IC FLASH 128M SPI 133MHZ 8WSON |
2 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |
|
|
Microchip Technology |
64MB 2.3V TO 3.6V SQI FLASH MEMO |
16,656 |
|
SST26 SQI® | Non-Volatile | FLASH | FLASH | 64Mb (8M x 8) | SPI - Quad I/O | 104MHz | 1.5ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WDFN (5x6) |
|
|
Micron Technology Inc. |
IC FLASH 1G PARALLEL 48TSOP |
12,456 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Gb (128M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
Toshiba Memory America, Inc. |
1GB SLC NAND BGA 24NM I TEMP (EE |
7,290 |
|
Benand™ | Non-Volatile | FLASH | FLASH - NAND (SLC) | 1Gb (128M x 8) | - | - | 25ns | - | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | 63-TFBGA (9x11) |
|
|
Cypress Semiconductor |
IC SRAM 2M PARALLEL 44TSOP II |
8,004 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 2Mb (128K x 16) | Parallel | - | 45ns | 45ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
|
|
Cypress Semiconductor |
IC FLASH 64M SPI 108MHZ 8SOIC |
13,572 |
|
Automotive, AEC-Q100, FL-L | Non-Volatile | FLASH | FLASH - NOR | 64Mb (8M x 8) | SPI - Quad I/O, QPI | 108MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-WSON (5x6) |
|
|
Cypress Semiconductor |
IC FLASH 128M SPI 66MHZ 24BGA |
21,876 |
|
FL-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 66MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 24-TBGA | 24-BGA (8x6) |
|
|
Cypress Semiconductor |
IC FLASH 128M SPI 133MHZ |
19,692 |
|
FS-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O, QPI | 133MHz | - | - | 1.7V ~ 2V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.209", 5.30mm Width) | 8-SOIC |
|
|
Micron Technology Inc. |
IC FLASH 128M PARALLEL 64LBGA |
6,319 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8, 8M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 64-LBGA | 64-LBGA (11x13) |
|
|
Micron Technology Inc. |
IC FLASH 128M PARALLEL 56TSOP |
1,967 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8, 8M x 16) | Parallel | - | 60ns | 95ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | 56-TSOP |
|
|
Microchip Technology |
IC EPROM 1M PARALLEL 44PLCC |
16,092 |
|
- | Non-Volatile | EPROM | EPROM - OTP | 1Mb (64K x 16) | Parallel | - | - | 90ns | 2.7V ~ 3.6V, 4.5V ~ 5.5V | -40°C ~ 85°C (TC) | Surface Mount | 44-LCC (J-Lead) | 44-PLCC (16.6x16.6) |
|
|
Winbond Electronics |
IC DRAM 512M PARALLEL 60VFBGA |
21,096 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-VFBGA (8x9) |
|
|
Microchip Technology |
IC FLASH 32M PARALLEL 48TFBGA |
6,840 |
|
SST39 MPF™ | Non-Volatile | FLASH | FLASH | 32Mb (2M x 16) | Parallel | - | 10µs | 70ns | 2.7V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |
|
|
Cypress Semiconductor |
IC FLASH |
14,904 |
|
Automotive, AEC-Q100, FL-S | Non-Volatile | FLASH | FLASH - NOR | 128Mb (16M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WSON (6x8) |