트랜지스터-FET, MOSFET-어레이
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-어레이
기록 3,829
페이지 70/128
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | FET 기능 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | 입력 커패시턴스 (Ciss) (최대) @ Vds | 전력-최대 | 작동 온도 | 장착 유형 | 패키지 / 케이스 | 공급자 장치 패키지 |
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|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
7,758 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
2,934 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Sanken |
MOSFET 6N-CH 250V 7A 12-SIP |
3,402 |
|
- | 6 N-Channel (3-Phase Bridge) | Standard | 250V | 7A | 500mOhm @ 3.5A, 10V | 4V @ 1mA | - | 450pF @ 10V | 4W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
5,076 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
7,434 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
8,838 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
6,606 |
|
EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 360mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Diodes Incorporated |
MOSFET 4N-CH 60V 1.4A SM8 |
3,366 |
|
- | 4 N-Channel (H-Bridge) | Logic Level Gate | 60V | 1.4A | 300mOhm @ 1.8A, 10V | 3V @ 250µA | 3.2nC @ 10V | 166pF @ 40V | 1.6W | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-8 | SM8 |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
3,222 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
4,770 |
|
EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 2.7V | 1.26V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
6,732 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
5,148 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16DIP |
3,150 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10V 16DIP |
7,758 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 25pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10V 16SOIC |
7,830 |
|
EPAD® | 4 N-Channel, Matched Pair | Standard | 10V | - | 500Ohm @ 5V | 1.01V @ 1µA | - | 25pF @ 5V | 600mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Sanken |
MOSFET 4N-CH 200V 10A 12SIP |
8,568 |
|
- | 4 N-Channel | Logic Level Gate | 200V | 10A | 175mOhm @ 5A, 10V | 4V @ 1mA | - | 850pF @ 10V | 5W | 150°C (TJ) | Through Hole | 12-SIP | 12-SIP w/fin |
|
|
Advanced Linear Devices Inc. |
MOSFET 2P-CH 10.6V 8SOIC |
8,784 |
|
- | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8SOIC |
5,238 |
|
- | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 40mA | - | - | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 8DIP |
7,848 |
|
EPAD® | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | 12mA, 3mA | 500Ohm @ 4.8V | 810mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16SOIC |
5,724 |
|
EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 500Ohm @ 3.6V | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
7,218 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
8,982 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 180mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
6,300 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 380mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4 P-CH 8V 16SOIC |
4,266 |
|
EPAD®, Zero Threshold™ | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 780mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16DIP |
7,164 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 0.08A 16SOIC |
7,362 |
|
EPAD®, Zero Threshold™ | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8DIP |
7,632 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Advanced Linear Devices Inc. |
MOSFET 2N-CH 10.6V 0.08A 8SOIC |
3,276 |
|
EPAD®, Zero Threshold™ | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10µA | - | - | 500mW | - | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Advanced Linear Devices Inc. |
MOSFET 4N-CH 10.6V 16DIP |
5,994 |
|
EPAD® | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP |
|
|
Sanken |
MOSFET 4N-CH 60V 7A 15-SIP |
4,482 |
|
- | 4 N-Channel | Standard | 60V | 7A | 100mOhm @ 3.5A, 10V | 2V @ 250µA | - | 660pF @ 10V | 4.8W | 150°C (TJ) | Through Hole | 15-SIP | 15-SIP |