트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 115/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Diodes Incorporated |
MOSFET N-CH 100V 2.9A POWERDI |
24,384 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.9A (Ta), 8.5A (Tc) | 4.5V, 10V | 122mOhm @ 3.3A, 10V | 3V @ 250µA | 14.9nC @ 10V | ±20V | 870.7pF @ 25V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 30V 7.9A SO-8FL |
12,006 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.9A (Ta), 38A (Tc) | 4.5V, 10V | 7.3mOhm @ 30A, 10V | 2.2V @ 250µA | 16nC @ 10V | ±20V | 913pF @ 15V | - | 920mW (Ta), 20.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 20V 1.5A SC70-6 |
372,822 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 90mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 6.3nC @ 4.5V | ±8V | 423pF @ 10V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88 (SC-70-6) | 6-TSSOP, SC-88, SOT-363 |
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Rohm Semiconductor |
MOSFET P-CH 20V 2A TSMT3 |
114,306 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4.5V | 135mOhm @ 2A, 4.5V | 2V @ 1mA | 4.9nC @ 4.5V | ±12V | 430pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 4A SOT223 |
42,864 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 10V | ±16V | 158pF @ 400V | - | 6.2W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Diodes Incorporated |
MOSFET N-CH 12V 4.8A U-WLB1010-4 |
59,634 |
|
- | N-Channel | MOSFET (Metal Oxide) | 12V | 4.8A (Ta) | 1.8V, 4.5V | 26mOhm @ 1A, 4.5V | 1.2V @ 250µA | 4.5nC @ 4.5V | ±8V | 450pF @ 6V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 | 4-UFBGA, WLBGA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 50A TO252 |
115,032 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 9mOhm @ 16A, 10V | 2.5V @ 250µA | 7.7nC @ 4.5V | ±20V | 680pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 30A TO252 |
41,172 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 4.5V, 10V | 34mOhm @ 15A, 10V | 2.5V @ 250µA | 16.6nC @ 10V | ±20V | 1180pF @ 30V | - | 66W (Tc) | 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Nexperia |
MOSFET P-CH 20V 4.4A TO-236AB |
45,156 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 1.8V, 4.5V | 36mOhm @ 3A, 4.5V | 950mV @ 250µA | 22.1nC @ 4.5V | ±8V | 1820pF @ 10V | - | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 7A 8SOIC |
76,968 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 34mOhm @ 7A, 10V | 2.4V @ 250µA | 16nC @ 10V | ±20V | 910pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
28,914 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | ±12V | 175pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Nexperia |
MOSFET N-CH 40V 30A LFPAK |
15,498 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 5V | 20mOhm @ 10A, 10V | 2.1V @ 1mA | 7.7nC @ 5V | ±10V | 798pF @ 25V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK33 | SOT-1210, 8-LFPAK33 |
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Vishay Siliconix |
MOSFET P-CH 20V 12A SC-70 |
48,120 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.5V, 4.5V | 20.5mOhm @ 6A, 4.5V | 1V @ 250µA | 62nC @ 8V | ±8V | 1750pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Diodes Incorporated |
MOSFET N-CHA 30V 8.4A DFN2020 |
46,782 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.4A (Ta) | 4.5V, 10V | 17mOhm @ 9A, 10V | 2.5V @ 250µA | 7nC @ 10V | ±20V | 393pF @ 15V | - | 700mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type B) | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET P-CH 20V 5.97A 6TSOP |
29,724 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.97A (Tc) | 2.5V, 4.5V | 60mOhm @ 4.7A, 4.5V | 1.5V @ 250µA | 12.4nC @ 5V | ±12V | 610pF @ 10V | - | 2W (Ta), 3.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
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Nexperia |
MOSFET N-CH 100V 9.4A LFPAK |
17,760 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Tc) | 10V | 153mOhm @ 2A, 10V | 4V @ 1mA | 9.4nC @ 10V | ±20V | 497pF @ 25V | - | 37.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
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Nexperia |
MOSFET N-CH 60V 17A LFPAK |
15,282 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 10V | 59mOhm @ 5A, 10V | 4V @ 1mA | 7.8nC @ 10V | ±20V | 494pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
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ON Semiconductor |
MOSFET N-CH 60V 2.7A SOT-223-4 |
241,290 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Ta) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 155pF @ 25V | - | 3W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 80V 24A LFPAK |
128,118 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 24A (Tc) | 10V | 45mOhm @ 5A, 10V | 4V @ 1mA | 12.5nC @ 10V | ±20V | 675pF @ 40V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET P-CH 30V 5.1A 6-TSOP |
98,124 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.1A (Tc) | 4.5V, 10V | 74mOhm @ 4.1A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 450pF @ 15V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Nexperia |
MOSFET P-CH 300V 0.21A SOT223 |
81,456 |
|
- | P-Channel | MOSFET (Metal Oxide) | 300V | 210mA (Ta) | 10V | 17Ohm @ 170mA, 10V | 2.55V @ 1mA | - | ±20V | 90pF @ 25V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
|
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Rohm Semiconductor |
MOSFET N-CH 100V 1.0A TSMT3 |
54,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 4V, 10V | 520mOhm @ 1A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | ±20V | 140pF @ 25V | - | 540mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Infineon Technologies |
MOSFET P-CH 30V 6A PQFN |
34,548 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta), 13A (Tc) | 4.5V, 10V | 37mOhm @ 7.8A, 10V | 2.4V @ 25µA | 13nC @ 10V | ±20V | 580pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
|
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Vishay Siliconix |
MOSFET P-CH 20V 12A PPAK SC70-6 |
27,756 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.5V, 4.5V | 25mOhm @ 6.5A, 4.5V | 850mV @ 250µA | 60nC @ 8V | ±8V | 1700pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
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Vishay Siliconix |
MOSFET N-CH 30V 4.5A SOT-23 |
26,274 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Tc) | 4.5V, 10V | 50mOhm @ 3.9A, 10V | 3V @ 250µA | 9.6nC @ 10V | ±20V | 350pF @ 15V | - | 1.25W (Ta), 1.66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Diodes Incorporated |
MOSFET N-CH 100V 2.3A SOT223 |
21,954 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.3A (Ta) | 4.5V, 10V | 220mOhm @ 1.6A, 10V | 2.5V @ 250µA | 8.3nC @ 10V | ±20V | 401pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Nexperia |
MOSFET N-CH 200V 0.55A SOT223 |
46,158 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 550mA (Ta) | 2.4V, 10V | 2.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 100pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 30V 9.7A SO-8FL |
36,744 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta), 48A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.2V @ 250µA | 21.5nC @ 10V | ±20V | 1264pF @ 15V | - | 920mW (Ta), 23.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 8A 8SOP |
22,854 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4.5V, 10V | 36mOhm @ 4.6A, 10V | 3V @ 250µA | 10.5nC @ 4.5V | ±20V | 1100pF @ 30V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 60V 44A 8PDFN |
25,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 44A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28nC @ 10V | ±20V | 1680pF @ 20V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |