트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 163/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 20V 300MA SOT-23-3 |
42,660 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 300mA (Ta) | 4.5V, 10V | 1Ohm @ 300mA, 10V | 2.4V @ 250µA | - | ±20V | 45pF @ 5V | - | 225mW (Ta) | - | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Panasonic Electronic Components |
CSP SINGLE P-CHANNEL MOSFET |
22,362 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 2.2A (Ta) | 1.5V, 4.5V | 74mOhm @ 1.5A, 4.5V | 1V @ 1.2mA | 7nC @ 4.5V | ±8V | 459pF @ 10V | - | 360mW (Ta) | -40°C ~ 85°C (TA) | Surface Mount | XLGA004-W-0808-RA01 | 4-XFLGA, CSP |
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Rohm Semiconductor |
RQ5C030TP IS A MOSFET WITH G-S P |
26,580 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 75mOhm @ 3A, 4.5V | 2V @ 1mA | 9.3nC @ 4.5V | ±12V | 840pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Diodes Incorporated |
MOSFET P-CH 20V 14A POWERDI |
56,868 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta), 54A (Tc) | 1.5V, 4.5V | 8mOhm @ 12A, 4.5V | 1V @ 250µA | 72nC @ 4.5V | ±8V | 6909pF @ 10V | - | 2.4W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
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Diodes Incorporated |
MOSFET BVDSS: 31V-40V U-DFN2020- |
107,838 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 11.6A (Ta) | 4.5V, 10V | 11.5mOhm @ 10A, 10V | 3V @ 250µA | 14.2nC @ 10V | ±20V | 1030pF @ 20V | - | 990mW (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | U-DFN2020-6 | 6-UDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 30V 8A 6TSOP |
29,100 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 28mOhm @ 7A, 10V | 3V @ 250µA | 19.6nC @ 10V | ±20V | 735pF @ 15V | - | 2.1W (Ta), 2.98W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
RQ6E050AJ IS SMALL SURFACE MOUNT |
25,074 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 2.5V, 4.5V | 35mOhm @ 5A, 4.5V | 1.5V @ 1mA | 4.7nC @ 4.5V | ±12V | 520pF @ 15V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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|
ON Semiconductor |
MOSFET P-CH 20V 3.2A SC88 |
59,400 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 67mOhm @ 2.9A, 4.5V | 1.2V @ 250µA | 10nC @ 4.5V | ±12V | 850pF @ 10V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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Rohm Semiconductor |
RQ6E045TN IS THE LOW ON - RESIST |
25,554 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 2.5V, 4.5V | 43mOhm @ 4.5A, 4.5V | 1.5V @ 1mA | 10.7nC @ 4.5V | ±12V | 540pF @ 10V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET NCH 24V 14.1A UDFN2020 |
105,732 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 24V | 14.1A (Ta) | 2.5V, 10V | 6mOhm @ 9A, 10V | 1.45V @ 250µA | 53.7nC @ 10V | ±12V | 1683pF @ 15V | - | 800mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Rohm Semiconductor |
RF4E060AJ IS LOW ON-RESISTANCE A |
21,756 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 2.5V, 4.5V | 37mOhm @ 6A, 4.5V | 1.5V @ 1mA | 4nC @ 4.5V | ±12V | 450pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | HUML2020L8 | 8-PowerUDFN |
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Vishay Siliconix |
MOSFET P-CHAN 20 V POWERPAK 1212 |
23,322 |
|
TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 20V | 22.1A (Ta), 35A (Tc) | 2.5V, 10V | 4.4mOhm @ 20A, 10V | 1.5V @ 250µA | 183nC @ 10V | ±12V | 5590pF @ 10V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
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Infineon Technologies |
MOSFET N-CH 30V 18A 8TDSON |
51,378 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 63A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 13nC @ 10V | ±20V | 870pF @ 15V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 20V 3A 8-WLCSP |
41,214 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.7V, 4.5V | 90mOhm @ 1A, 4.5V | 1.5V @ 250µA | 10nC @ 10V | ±12V | 660pF @ 10V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.0x1.5) | 6-UFBGA, WLCSP |
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Rohm Semiconductor |
RQ5E040RP IS A SMALL SIGNAL MOSF |
26,292 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 45mOhm @ 4A, 10V | 1.5V @ 1mA | 10.5nC @ 5V | ±20V | 1000pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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|
Nexperia |
MOSFET N-CHANNEL 20V 6WLCSP |
70,602 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 8.7A (Ta) | 1.5V, 4.5V | 21mOhm @ 3A, 4.5V | 0.9V @ 250µA | 6.2nC @ 4.5V | ±8V | 105pF @ 10V | - | 400mW | 150°C (TJ) | Surface Mount | 6-WLCSP (1.48x.98) | 6-XFBGA, WLCSP |
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Nexperia |
MOSFET P-CHANNEL 20V 4WLCSP |
80,820 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | - | 2.5V, 4.5V | - | - | 19.1nC @ 4.5V | - | - | - | 556mW | 150°C (TJ) | Surface Mount | 4-WLCSP (2x2) | 4-XFBGA, WLCSP |
|
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ON Semiconductor |
MOSFET N-CH 30V 48A SO8FL |
324,114 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.7A (Ta), 48A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 10.8nC @ 4.5V | ±20V | 1264pF @ 15V | - | 920mW (Ta), 23.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
CONSUMER |
23,520 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 7.6A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
|
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 6.8A 6TSOP |
838,794 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 6.8A (Tc) | 4.5V, 10V | 65mOhm @ 6A, 10V | 2.5V @ 250µA | 21nC @ 10V | ±20V | 705pF @ 15V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 7.5A 6TSOP |
27,012 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Tc) | 4.5V, 10V | 43mOhm @ 5.3A, 10V | 2.5V @ 250µA | 23.5nC @ 10V | ±20V | 870pF @ 15V | - | 4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
|
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|
Rohm Semiconductor |
RF6E065BN IS LOW ON-RESISTANCE A |
22,536 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 15.3mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16.3nC @ 10V | ±20V | 680pF @ 15V | - | 910mW (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
|
|
|
Infineon Technologies |
COOLMOS P7 700V SOT-223 |
25,728 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 1.2Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8nC @ 10V | ±16V | 174pF @ 400V | - | 6.3W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
|
|
|
Diodes Incorporated |
MOSFETN-CHAN 30V POWERDI3333-8 |
31,488 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.5V @ 250µA | 42nC @ 10V | ±20V | 2000pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
|
|
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Diodes Incorporated |
MOSFET N-CH 20V 2.44 A SOT-23-6 |
22,116 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 120mOhm @ 4A, 4.5V | 700mV @ 250µA | 3nC @ 4.5V | ±12V | 303pF @ 15V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
|
|
|
Rohm Semiconductor |
RQ6E035SP IS THE LOW ON - RESIST |
27,546 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 65mOhm @ 3.5A, 10V | 2.5V @ 1mA | 9.2nC @ 5V | ±20V | 780pF @ 10V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 38A U8FL |
140,214 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 9.4mOhm @ 30A, 10V | 2.1V @ 250µA | 7.8nC @ 4.5V | ±20V | 770pF @ 15V | - | 780mW (Ta), 21.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
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ON Semiconductor |
MOSFET P-CH 20V 8.2A UDFN |
27,000 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.5V, 4.5V | 18mOhm @ 7A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | ±8V | 2240pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
|
|
|
Diodes Incorporated |
MOSFET P-CH 20V 4.1A 4UWLB |
145,830 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 2.5V, 4.5V | 47mOhm @ 1A, 4.5V | 1.2V @ 250µA | 2.3nC @ 4.5V | -6V | 218pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-WLB1010-4 | 4-UFBGA, WLBGA |
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ON Semiconductor |
MOSFET P-CH 20V 8.2A 6UDFN |
25,512 |
|
µCool™ | P-Channel | MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 1.5V, 4.5V | 18mOhm @ 7A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | ±8V | 2240pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |