트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 232/999
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제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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ON Semiconductor |
MOSFET N-CH 80V 65A POWER56 |
4,212 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 65A (Tc) | 10V | 7.5mOhm @ 65A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 2470pF @ 40V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Rohm Semiconductor |
RD3L150SNFRA IS A POWER MOSFET F |
6,966 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 4V, 10V | 40mOhm @ 15A, 10V | 3V @ 1mA | 18nC @ 10V | ±20V | 930pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 30.5A 8-SOIC |
6,030 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30.5A (Tc) | 4.5V, 10V | 3.9mOhm @ 15A, 10V | 2.4V @ 250µA | 65nC @ 10V | ±20V | 2730pF @ 15V | - | 3W (Ta), 6.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 65A SO8FL |
3,042 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 17.5A (Ta), 65A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.3V @ 1mA | 30.5nC @ 10V | ±20V | 2100pF @ 15V | - | 1.63W (Ta), 22.73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 3A TO252 |
5,382 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO-220AB |
22,530 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | ±20V | 2672pF @ 16V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 100A POWERPAKSO |
7,038 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 0.94mOhm @ 20A, 10V | 2.2V @ 250µA | 60nC @ 4.5V | +20V, -16V | 7650pF @ 15V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Alpha & Omega Semiconductor |
100V N-CHANNEL ALPHASGT TM |
3,942 |
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AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 16.5A (Ta), 58A (Tc) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2.6V @ 250µA | 35nC @ 10V | ±20V | 1725pF @ 50V | - | 6.2W (Ta), 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | UltraSO-8™ | 3-PowerSMD, Flat Leads |
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Vishay Siliconix |
MOSFET P-CH 20V 9.8A 8SOIC |
8,406 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 9.8A (Ta) | 2.5V, 10V | 11mOhm @ 13.7A, 10V | 1.4V @ 250µA | 56nC @ 4.5V | ±12V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 600V DPAK |
8,100 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 950mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8nC @ 10V | ±25V | 271pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A 8-SOIC |
7,686 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 3.2mOhm @ 15A, 10V | 2.5V @ 250µA | 95nC @ 10V | ±20V | 3545pF @ 15V | - | 3W (Ta), 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 18A 8SOIC |
4,734 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.2mOhm @ 18A, 10V | 2.5V @ 250µA | 112nC @ 10V | ±20V | 4615pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
NCH 100V 17.5A POWER MOSFET |
3,186 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 17.5A (Ta) | 4V, 10V | 105mOhm @ 8.8A, 10V | 2.5V @ 1mA | 24nC @ 10V | ±20V | 950pF @ 25V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
N-CHANNEL 800 V, 1.50 OHM TYP., |
2,016 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | ±30V | 177pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
5,598 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 6A TO252 |
3,330 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 750mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7nC @ 10V | ±30V | 555pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
25,554 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 100V 51A 8PQFN |
7,200 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 51A (Tc) | 6V, 10V | 12.8mOhm @ 16A, 10V | 4V @ 90µA | 14nC @ 6V | ±20V | 1515pF @ 50V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 150V 21A DPAK |
8,784 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 3.7A (Ta), 21A (Tc) | 6V, 10V | 66mOhm @ 7A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 1295pF @ 25V | - | 95W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 19.7A 8SOIC |
5,490 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 19.7A (Tc) | 6V, 10V | 10mOhm @ 15A, 10V | 3.3V @ 250µA | 69nC @ 10V | ±20V | 2410pF @ 50V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
PCH -45V -16A POWER MOSFET |
3,276 |
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- | P-Channel | MOSFET (Metal Oxide) | 45V | 16A (Ta) | 4V, 10V | 50mOhm @ 16A, 10V | 3V @ 1mA | 16nC @ 5V | ±20V | 2000pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 15A DPAK |
6,030 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10nC @ 10V | ±20V | 610pF @ 10V | - | 46W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
T8 80V U8FL |
5,940 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 4.7A (Ta), 12A (Tc) | 10V | 55mOhm @ 5A, 10V | 4V @ 15µA | 4.7nC @ 10V | ±20V | 220pF @ 40V | - | 2.9W (Ta), 18W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO263-3 |
19,104 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.5mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | ±20V | 9600pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO263-7 |
13,944 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.1mOhm @ 80A, 10V | 4V @ 150µA | 145nC @ 10V | ±20V | 9600pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 20V 30A DIRECTFET |
100,740 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.45V @ 250µA | 57nC @ 4.5V | ±20V | 5040pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 20V 30A DIRECTFET |
50,388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.45V @ 250µA | 57nC @ 4.5V | ±20V | 5040pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 20V 30A DIRECTFET |
18,576 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.45V @ 250µA | 57nC @ 4.5V | ±20V | 5040pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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ON Semiconductor |
MOSFET N-CH 25V 124A 8PQFN |
5,490 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 124A (Tc) | 4.5V, 10V | 1.9mOhm @ 28A, 10V | 3V @ 1mA | 63nC @ 10V | ±16V | 4615pF @ 13V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N CH 60V 110A TO-220AB |
21,420 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4555pF @ 25V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |