트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 238/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
3,600 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 3V @ 250µA | 46nC @ 10V | ±16V | 1480pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET N-CH 25V 100A 8-SON |
3,456 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 1.9V @ 250µA | 18nC @ 4.5V | +16V, -12V | 2660pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 24.5A 8-SOIC |
4,878 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24.5A (Tc) | 4.5V, 10V | 5.2mOhm @ 15A, 10V | 2.6V @ 250µA | 68nC @ 10V | ±20V | 3150pF @ 15V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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STMicroelectronics |
MOSFET N-CH 30V 13A 8-SOIC |
6,678 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Tc) | 4.5V, 10V | 6.6mOhm @ 6.5A, 10V | 1V @ 250µA | 12nC @ 4.5V | +22V, -20V | 1500pF @ 25V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 45V 9.5A 8-SOIC |
3,582 |
|
- | N-Channel | MOSFET (Metal Oxide) | 45V | 9.5A (Ta) | 4V, 10V | 16mOhm @ 9.5A, 10V | - | 26.5nC @ 5V | 20V | 1830pF @ 10V | - | 2W (Ta) | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
5,292 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
PMOS DPAK 40V 4.4 MOHM |
7,578 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 3V @ 250µA | 130nC @ 10V | ±16V | 6250pF @ 20V | - | 227W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 49A TO220FP |
16,596 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 12mOhm @ 26A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 2900pF @ 25V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 30V 60A POWERPAKSO-8 |
5,490 |
|
TrenchFET® Gen III | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 1.8mOhm @ 20A, 10V | 2.5V @ 250µA | 130nC @ 10V | ±20V | 4980pF @ 15V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 30V 27A PWRFLAT56 |
3,762 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 3.9mOhm @ 13.5A, 10V | 1.2V @ 1mA (Min) | 13.7nC @ 4.5V | ±20V | 2110pF @ 25V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 650V 10A DPAK |
4,176 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 430mOhm @ 5A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 590pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 150V 27A D2PAK |
18,324 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 39mOhm @ 27A, 10V | 4V @ 250µA | 18.6nC @ 10V | ±20V | 1285pF @ 75V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 35A D2PAK |
22,128 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 35A (Tc) | 10V | 45mOhm @ 15A, 10V | 4V @ 250µA | 55nC @ 10V | ±20V | 1180pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 150V 2.7A 8MLP |
4,032 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 150V | 2.7A (Ta), 9A (Tc) | 6V, 10V | 160mOhm @ 2.4A, 10V | 4V @ 250µA | 24nC @ 10V | ±25V | 1360pF @ 75V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Nexperia |
MOSFET N-CH 200V 35A D2PAK |
19,680 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 35A (Tc) | 10V | 70mOhm @ 17A, 10V | 4V @ 1mA | 77nC @ 10V | ±20V | 4570pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
T6 40V MOSFET |
6,858 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 29A (Ta), 140A (Tc) | 10V | 2.3mOhm @ 50A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 2100pF @ 25V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK |
21,000 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | ±20V | 13660pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
40V N CH MOSFET |
5,526 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 211A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 2.2V @ 250µA | - | ±20V | 7120pF @ 20V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
5,364 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.7V @ 250µA | 71nC @ 10V | ±20V | 2425pF @ 40V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
3,708 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 13A, 10V | 3V @ 250µA | 100nC @ 10V | ±25V | 3939pF @ 15V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 100V 44A DPAK-3 |
6,282 |
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Automotive, AEC-Q101, UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 44A (Tc) | 6V, 10V | 47mOhm @ 21A, 6V | 4V @ 250µA | 36nC @ 10V | ±20V | 1635pF @ 25V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 64A TO-247AC |
29,814 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 16mOhm @ 37A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 1900pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 150V 29A DPAK |
6,660 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4A (Ta), 29A (Tc) | 6V, 10V | 54mOhm @ 9A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1770pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 2A DPAK |
5,364 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 150V 29A D-PAK |
6,624 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4A (Ta), 29A (Tc) | 6V, 10V | 54mOhm @ 9A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 1770pF @ 25V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
6,768 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | - | 2.1V @ 500µA | 80nC @ 10V | ±20V | 7540pF @ 15V | - | 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 100V 78A 8PQFN |
8,640 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 78A (Tc) | 6V, 10V | 7.2mOhm @ 28A, 10V | 4V @ 150µA | 24nC @ 6V | ±20V | 2635pF @ 50V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 60V 60A D2PAK |
8,316 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 16mOhm @ 30A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 1810pF @ 25V | - | 110W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 45V 150A |
2,016 |
|
U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 45V | 150A (Tc) | 4.5V, 10V | 1.04mOhm @ 50A, 10V | 2.4V @ 1mA | 99nC @ 10V | ±20V | 9600pF @ 22.5V | - | 960mW (Ta), 170W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 60V 13.5A 8MLP |
3,636 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 13.5A (Ta), 22A (Tc) | 4.5V, 10V | 7.9mOhm @ 13.5A, 10V | 3V @ 250µA | 64nC @ 10V | ±20V | 4550pF @ 30V | - | 2.3W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |