트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 343/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 60V 120A D2PAK |
5,040 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 3mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6540pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 110A D2PAK |
8,244 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 4.5V, 10V | 6.9mOhm @ 30A, 10V | 3V @ 250µA | 345nC @ 10V | ±20V | 11400pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 150V 3A PPAK SO-8 |
8,658 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 3A (Ta) | 6V, 10V | 90mOhm @ 5.2A, 10V | 4V @ 250µA | 135nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 11.5A TO263 |
52,166 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 11.5A (Ta), 152A (Tc) | 6V, 10V | 6.2mOhm @ 20A, 10V | 3.5V @ 250µA | 136nC @ 10V | ±20V | 6460pF @ 75V | - | 2.1W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 180A TO263-7 |
4,752 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 196µA | 166nC @ 4.5V | ±20V | 28000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 40V 162A TO-262 |
4,950 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 150V 130A D2PAK |
4,356 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 7.5mOhm @ 100A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 7350pF @ 75V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK-6 |
4,320 |
|
Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 2.1mOhm @ 90A, 10V | 4.5V @ 250µA | 193nC @ 10V | ±20V | 13600pF @ 50V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 80V |
8,784 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 36A (Ta), 254A (Tc) | 8V, 10V | 1.35mOhm @ 36A, 10V | 4V @ 250µA | 273nC @ 10V | ±20V | 20720pF @ 40V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool™88 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 250V 25A TO220-3 |
4,896 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 90A D2PAK |
5,274 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 4.5V, 10V | 19mOhm @ 20A, 10V | 3V @ 250µA | 326nC @ 10V | ±20V | 11100pF @ 50V | - | 13.6W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 40V 110A D2PAK |
3,348 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 5mOhm @ 20A, 10V | 4V @ 250µA | 280nC @ 10V | ±20V | 11300pF @ 25V | - | 15W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 85V 96A TO-263 |
3,654 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 85V | 96A (Tc) | 10V | 13mOhm @ 48A, 10V | 4V @ 250µA | 180nC @ 10V | ±15V | 13100pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 420A 8PQFN |
3,294 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 420A (Tc) | 6V, 10V | 0.56mOhm @ 64A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | 26110pF @ 20V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (8x8) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 80V 180A TO263-7 |
2,052 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.5V @ 270µA | 206nC @ 10V | ±20V | 14200pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
6,840 |
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Automotive, AEC-Q101, DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.3mOhm @ 60A, 10V | 4.5V @ 250µA | 180nC @ 10V | ±20V | 12800pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-6 |
4,446 |
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Automotive, AEC-Q101, DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.3mOhm @ 60A, 10V | 4.5V @ 250µA | 180nC @ 10V | ±20V | 12800pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 100V 24A |
2,538 |
|
Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Ta), 162A (Tc) | 6V, 10V | 2.95mOhm @ 24A, 10V | 4V @ 250µA | 111nC @ 10V | ±20V | 7835pF @ 50V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool™88 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 120V 180A TO263-7 |
6,624 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 180A (Tc) | 10V | 3.6mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | ±20V | 13800pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 150V 152A TO-220 |
3,562 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 11.5A (Ta), 152A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | 3.5V @ 250µA | 136nC @ 10V | ±20V | 6460pF @ 75V | - | 2.1W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO263-3 |
8,424 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 200V 61A D2PAK |
5,292 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 200V | 61A (Tc) | 10V | 23mOhm @ 30.5A, 10V | 5V @ 250µA | 104nC @ 10V | ±25V | 4329pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
7,992 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | ±20V | 12800pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 155A 8HSOF |
7,956 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 155A (Tc) | 8V, 10V | 5.9mOhm @ 150A, 10V | 4V @ 270µA | 92nC @ 10V | ±20V | 7200pF @ 75V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V D2PAK-7 |
2,160 |
|
OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 1.7mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | ±20V | 840pF @ 50V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
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Infineon Technologies |
MOSFET N-CH 200V 96A HSOF-8 |
3,438 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 96A (Tc) | 10V | 11.1mOhm @ 96A, 10V | 4V @ 267µA | 87nC @ 10V | ±20V | 7000pF @ 100V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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ON Semiconductor |
MOSFET N-CH 100V TO-220AB-3 |
5,256 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 3.6mOhm @ 75A, 10V | 4V @ 250µA | 116nC @ 10V | ±20V | 7295pF @ 25V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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|
IXYS |
MOSFET P-CH 85V 96A TO-220 |
5,040 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 85V | 96A (Tc) | 10V | 13mOhm @ 48A, 10V | 4V @ 250µA | 180nC @ 10V | ±15V | 13100pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET P-CH 100V 76A TO-263 |
6,840 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 76A (Tc) | 10V | 25mOhm @ 500mA, 10V | 4V @ 250µA | 197nC @ 10V | ±15V | 13700pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V TO-247-3 |
5,940 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 158A (Tc) | 10V | 5.9mOhm @ 120A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 9445pF @ 75V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |