트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 350/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Infineon Technologies |
MV POWER MOS |
4,914 |
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OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 150V | 114A (Tc) | 8V, 10V | 7.3mOhm @ 57A, 10V | 4.6V @ 160µA | 61nC @ 10V | ±20V | 4700pF @ 75V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK-3 |
2,844 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.8V @ 184µA | 139nC @ 10V | ±20V | 10300pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N CH 100V 110A TO-220 |
3,690 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 7mOhm @ 55A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 5500pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 120A TO263 |
2,376 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 4.5V, 10V | 10.1mOhm @ 30A, 10V | 2.5V @ 250µA | 190nC @ 10V | ±20V | 7000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
6,390 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
N-CHANNEL 600 V, 0.195 OHM TYP., |
6,966 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 220mOhm @ 9A, 10V | 5V @ 250µA | 29nC @ 10V | ±25V | 1055pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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IXYS |
MOSFET N-CH 500V 3A TO220AB |
4,464 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3A (Tc) | - | 1.5Ohm @ 1.5A, 0V | - | 40nC @ 5V | ±20V | 1070pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 100V 120A TO220AB |
5,130 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 4.5V, 10V | - | 2.5V @ 250µA | 190nC @ 10V | ±20V | 7000pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 21A |
5,400 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1500pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 800V 6.2A TO-220FP |
7,074 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6.2A (Tc) | 10V | 1.5Ohm @ 3.1A, 10V | 4.5V @ 100µA | 46nC @ 10V | ±30V | 1320pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
7,776 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 3094pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 41A TO-247AC |
6,030 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 55mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2800pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 60V 195A TO247 |
3,798 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 75V 240A POWERSO-10 |
513 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 10V | 2.6mOhm @ 120A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 6800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
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STMicroelectronics |
MOSFET N-CH 24V 280A POWERSO-10 |
6,372 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 24V | 200A (Tc) | 10V, 5V | 1mOhm @ 80A, 10V | 2V @ 250µA | 109nC @ 10V | ±20V | 7055pF @ 15V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 10-PowerSO | PowerSO-10 Exposed Bottom Pad |
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
4,986 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 60A, 10V | 3.8V @ 250µA | 180nC @ 10V | ±20V | 12800pF @ 25V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 900V 18.5A D2PAK |
2,430 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 900V | 18.5A (Tc) | 10V | 299mOhm @ 9A, 10V | 5V @ 100µA | 43nC @ 10V | ±30V | 1645pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO-247 |
5,508 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 800V 11A D2PAK |
6,318 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | ±30V | 1630pF @ 25V | - | 150W (Tc) | -65°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 3A D2PAK |
5,166 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3A (Tc) | - | 5.5Ohm @ 1.5A, 0V | - | 37.5nC @ 5V | ±20V | 1020pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 26A TO220FP |
5,634 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5nC @ 10V | ±25V | 1781pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO220 |
3,258 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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IXYS |
FET N-CHANNEL |
7,128 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 38A (Tc) | 10V | 50mOhm @ 19A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±20V | 2240pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 80V 180A H2PAK-6 |
4,626 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 80V | 180A (Tc) | 10V | 2.1mOhm @ 90A, 10V | 4V @ 250µA | 193nC @ 10V | ±20V | 13600pF @ 50V | - | 315W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H²PAK | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 150V 120A TO263-3 |
2,556 |
|
OptiMOS™-5 | N-Channel | MOSFET (Metal Oxide) | 150V | 120A | 10V | 4.8mOhm @ 100A, 10V | 4.9V @ 255µA | 84nC @ 10V | ±20V | 380pF @ 75V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 1700V 2.6A TO247-3 |
4,554 |
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PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1700V | 2.6A (Tc) | 10V | 13Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | ±30V | 1100pF @ 100V | - | 160mW | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1700V 2.6A |
8,244 |
|
PowerMESH™ | N-Channel | MOSFET (Metal Oxide) | 1700V | 2.6A (Tc) | 10V | 13Ohm @ 1.3A, 10V | 5V @ 250µA | 44nC @ 10V | ±30V | 1100pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
8,622 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 100A TO247AC |
2,448 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 7.5V, 10V | 5.4mOhm @ 20A, 10V | 4V @ 250µA | 165nC @ 10V | ±20V | 6250pF @ 75V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 160A TO-247 |
5,544 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 160A (Tc) | 10V | 7mOhm @ 25A, 10V | 4.5V @ 250µA | 132nC @ 10V | ±30V | 6600pF @ 25V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |