트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 386/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Rohm Semiconductor |
NCH 600V 12A POWER MOSFET. R601 |
4,752 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 15V | 390mOhm @ 6A, 15V | 7V @ 2.5mA | 28nC @ 15V | ±30V | 900pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Vishay Siliconix |
MOSFET N-CHAN 600V TO-220AB |
8,748 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 182mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1423pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH EF PWR TO-220AB |
7,110 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 193mOhm @ 9.5A, 10V | 5V @ 250µA | 32nC @ 10V | ±30V | 1081pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 400V 15A TO-220 |
6,192 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 400V | 15A (Tc) | 10V | 250mOhm @ 7.5A, 10V | 4.5V @ 100µA | 65nC @ 10V | ±30V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V D2PAK TO-263 |
6,786 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 182mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1423pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 460A |
7,560 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 460A (Tc) | 6V, 10V | 0.8mOhm @ 50A, 10V | 4V @ 250µA | 291nC @ 10V | ±20V | 23100pF @ 20V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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STMicroelectronics |
MOSFET N-CHANNEL 800V 24A D2PAK |
8,100 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 24A (Tc) | 10V | 180mOhm @ 12A, 10V | 5V @ 100µA | 43nC @ 10V | ±30V | 1530pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V 15A |
3,400 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 15A (Ta), 99A (Tc) | 6V, 10V | 6.5mOhm @ 15A, 10V | 4V @ 250µA | 108nC @ 10V | ±20V | 8205pF @ 75V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool™88 | 8-PowerVDFN |
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ON Semiconductor |
MOSFET N-CH 120V 20A/129A |
5,094 |
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Dual Cool™, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 120V | 20A (Ta), 129A (Tc) | 6V, 10V | 4.14mOhm @ 20A, 10V | 4V @ 250µA | 107nC @ 10V | ±20V | 7850pF @ 60V | - | 3.2W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool™88 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CHAN 60-V D2PAK (TO-263 |
7,236 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 150A (Tc) | 7.5V, 10V | 1.75mOhm @ 30A, 10V | 4V @ 250µA | 212nC @ 10V | ±20V | 10895pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_LEGACY |
2,700 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 800V 17A TO220 |
7,074 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 8.5A, 10V | 4.5V @ 1.7mA | 75nC @ 10V | ±20V | 3205pF @ 100V | - | 212W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 3.2A PWRFLAT88 |
6,642 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22.5A (Tc) | 10V | 120mOhm @ 12A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2700pF @ 100V | - | 2.8W (Ta), 150W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CHAN 600V 24A POWERPAK |
5,130 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 141mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 2744pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 600V 13A TO-247 |
5,850 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 285mOhm @ 6.5A, 10V | 4V @ 250µA | 35nC @ 10V | ±25V | 1000pF @ 50V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 100V 120A TO-220FP |
7,146 |
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STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 100V | 46A (Tc) | 10V | 9.6mOhm @ 23A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | 3305pF @ 25V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 650V 30A TO220F |
2,196 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 57nC @ 10V | ±30V | 2310pF @ 400V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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ON Semiconductor |
FET 650V 24A TO247AD |
7,002 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CHAN 600V |
5,814 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | ±30V | 1757pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 29A POWERPAK8 |
3,276 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 100mOhm @ 13.5A, 10V | 4V @ 250µA | 135nC @ 10V | ±30V | 2609pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 600V |
7,992 |
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EL | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | ±30V | 1757pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 14A TO-220FP |
8,856 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32nC @ 10V | ±30V | 1100pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_NEW |
5,346 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4.5V @ 390µA | 36nC @ 10V | ±20V | 1503pF @ 400V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO247 |
7,632 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 19A TO-247AC |
3,276 |
|
EF | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 182mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1423pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 800V 11A I2PAK-3 |
2,952 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 5V @ 250µA | 43.6nC @ 10V | ±30V | 1630pF @ 25V | - | 150W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 600V 34A TO-247 |
4,824 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | ±25V | 2500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 800V TO-220AB |
5,706 |
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E | N-Channel | MOSFET (Metal Oxide) | 800V | 17.4A (Tc) | 10V | 235mOhm @ 11A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 1388pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 22A TO-247 |
3,384 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 148mOhm @ 11A, 10V | 5V @ 250µA | 45nC @ 10V | ±25V | 816pF @ 100V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MV POWER MOS |
7,578 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |