트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 40/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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STMicroelectronics |
MOSFET N-CH 100V 40A TO-220 |
20,412 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 5V, 10V | 33mOhm @ 20A, 10V | 2.5V @ 250µA | 64nC @ 5V | ±17V | 2300pF @ 25V | - | 150W (Tc) | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET P-CH 30V 50A D2PAK |
17,190 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 5V | 25mOhm @ 25A, 5V | 2V @ 250µA | 100nC @ 5V | ±15V | 4900pF @ 25V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 210A POWER56 |
32,298 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 210A (Tc) | 10V | 2.8mOhm @ 80A, 10V | 4V @ 250µA | 111nC @ 10V | ±20V | 8755pF @ 50V | - | 3.5W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK |
23,136 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 4.5V, 10V | 2.4mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | ±16V | 11210pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN |
13,848 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 370A (Tc) | 4.5V, 10V | 0.67mOhm @ 50A, 10V | 2V @ 250µA | 81nC @ 4.5V | ±20V | 12168pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET P-CH 100V 40A TO-220AB |
32,436 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 60mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 2700pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 20A D2PAK |
16,782 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 3080pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 300A 8HSOF |
35,148 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 300A (Tc) | 4.5V, 10V | 0.4mOhm @ 150A, 10V | 2.2V @ 250µA | 163nC @ 4.5V | ±20V | 24000pF @ 15V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 600V 7A TO-220 |
20,520 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 950mOhm @ 3.5A, 10V | 4.5V @ 100µA | 53nC @ 10V | ±30V | 1110pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 11A TO-220 |
75,390 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52nC @ 10V | ±30V | 1490pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 80V 120A TO220AB |
55,818 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.5mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9961pF @ 40V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 370A 5DFN |
16,794 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 370A (Tc) | 4.5V, 10V | 0.67mOhm @ 50A, 10V | 2V @ 250µA | 81nC @ 4.5V | ±20V | 12168pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 55V 169A TO-220AB |
30,498 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 169A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 5480pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 80A TO-220 |
54,174 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 14mOhm @ 25A, 10V | 5V @ 100µA | 60nC @ 10V | ±20V | 3040pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 120A D2PAK |
29,268 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.7mOhm @ 75A, 10V | 4.5V @ 250µA | 210nC @ 10V | ±20V | 15265pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK7 |
23,976 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9130pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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Infineon Technologies |
MOSFET N-CH 150V DIRECTFET L8 |
38,891 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 375A (Tc) | 10V | 11mOhm @ 40A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 6660pF @ 25V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET L8 | DirectFET™ Isometric L8 |
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Infineon Technologies |
MOSFET N-CH 800V 17A D2PAK |
25,890 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2300pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK |
12,377 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9370pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 900V 15A TO-263 |
20,340 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
30,972 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 40V 160A D2PAK |
19,638 |
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Automotive, AEC-Q101, STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.5mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7400pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 192A TO-220AB |
38,322 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 192A (Tc) | 10V | 4.2mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | ±20V | 9500pF @ 50V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 9.2A TO220AB |
24,882 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 9.2A (Ta), 53A (Tc) | 4.5V, 10V | 19.5mOhm @ 30A, 10V | 3V @ 250µA | 115nC @ 10V | ±20V | 3500pF @ 25V | - | 3.1W (Ta), 104.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 1500V 2.5A TO220 |
21,087 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1500V | 2.5A (Ta) | 10V | 10.5Ohm @ 1A, 10V | - | 34nC @ 10V | ±30V | 650pF @ 30V | - | 2W (Ta), 32W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET P-CH 60V 110A D2PAK |
45,864 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 4.5V, 10V | 8mOhm @ 30A, 10V | 3V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 25V | - | 3.75W (Ta), 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 240A D2PAK7 |
33,702 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 240A (Tc) | 10V | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9200pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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STMicroelectronics |
MOSFET N-CH 500V 35A |
13,584 |
|
Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 500V | 35A (Tc) | 10V | 84mOhm @ 17.5A, 10V | 5V @ 250µA | 57nC @ 10V | ±25V | 2600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO220-3 |
31,068 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 300A 8HSOF |
88,614 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 0.77mOhm @ 100A, 10V | 4V @ 230µA | 287nC @ 10V | ±20V | 22945pF @ 25V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |