트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 445/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 55A TO251A |
5,580 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | 2.5V @ 250µA | 50nC @ 10V | ±20V | 2305pF @ 50V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-251A | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 60V 16A 70A 8WDFN |
6,660 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 6.8mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
Vishay Siliconix |
MOSFET N-CHANNEL 60V 14A TO220 |
5,094 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
Diodes Incorporated |
MOSFET NCH 30V 22A POWERDI |
2,574 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 145A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 3V @ 250µA | 43.7nC @ 10V | +20V, -16V | 2370pF @ 15V | - | 3.2W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 60V 35A POWER56 |
8,802 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 4.5V, 10V | 15mOhm @ 16.5A, 10V | 3V @ 250µA | 44nC @ 10V | ±20V | 1980pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 66A 8PDFN |
4,932 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 66A (Tc) | 4.5V, 10V | 6.1mOhm @ 16A, 10V | 2.5V @ 250µA | 19.3nC @ 10V | ±20V | 1136pF @ 15V | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
|
|
ON Semiconductor |
MOSFET N-CH 30V 8SOFL |
3,708 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.2V @ 250µA | 49.4nC @ 10V | ±20V | 4850pF @ 15V | - | 930mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
ON Semiconductor |
MOSFET N-CH 30V 8SOFL |
3,294 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 93A (Tc) | 4.5V, 10V | 3.2mOhm @ 30A, 10V | 2.2V @ 250µA | 49.4nC @ 10V | ±20V | 4850pF @ 15V | - | 930mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
Infineon Technologies |
MOSFET N-CH 400V 0.21A SOT-223 |
8,082 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 210mA (Ta) | 0V, 10V | 18Ohm @ 210mA, 10V | 1V @ 94µA | 6.8nC @ 5V | ±20V | 135pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
|
|
Rohm Semiconductor |
MOSFET N-CH 45V 7A SOP8 |
6,570 |
|
- | N-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | 16.8nC @ 5V | 20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
ON Semiconductor |
MOSFET N-CH 60V 16A 8WDFN |
7,344 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Ta), 70A (Tc) | 4.5V, 10V | 6.5mOhm @ 35A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1400pF @ 25V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
|
|
ON Semiconductor |
T6 60V NCH LL IN U8FL |
7,722 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
Infineon Technologies |
MOSFET N-CH BARE DIE |
2,178 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
MOSFET N-CH 40V 24A 102A 5DFN |
5,472 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 65µA | 23nC @ 10V | ±20V | 1600pF @ 25V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
ON Semiconductor |
MOSFET N-CH 80V 50A POWER56 |
6,192 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 13.4mOhm @ 50A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1440pF @ 40V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 8A DPAK-3 |
8,694 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19nC @ 10V | +10V, -20V | 890pF @ 10V | - | 27W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 10A DPAK-3 |
5,436 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 6V, 10V | 28mOhm @ 5A, 10V | 3V @ 1mA | 10nC @ 10V | ±20V | 410pF @ 10V | - | 25W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 8A DPAK-3 |
4,122 |
|
U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 6V, 10V | 54mOhm @ 4A, 10V | 3V @ 1mA | 10nC @ 10V | ±20V | 400pF @ 10V | - | 25W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO251A |
2,376 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | 263pF @ 100V | - | 56.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
|
|
Rohm Semiconductor |
MOSFET N-CH 60V 8A CPT3 |
7,038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 4V, 10V | 80mOhm @ 8A, 10V | 2.5V @ 1mA | 9.4nC @ 10V | ±20V | 380pF @ 10V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 12.5A 8SOIC |
4,086 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4V, 10V | 12mOhm @ 12.5A, 10V | 2.5V @ 1mA | 12.7nC @ 5V | ±20V | 1000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
Renesas Electronics America |
MOSFET P-CH 30V 24A 8HWSON |
6,786 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 7.8mOhm @ 24A, 5V | - | 74nC @ 10V | ±20V | 2800pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
|
|
Nexperia |
MOSFET N-CH 80V 100A LFPAK56 |
6,858 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 5V, 10V | 8mOhm @ 25A, 10V | 2.1V @ 1mA | 104nC @ 10V | ±20V | 8167pF @ 25V | - | 238W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
8,928 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET BVDSS: 31V-40V POWERDI333 |
6,804 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
MOSFET N-CH 30V 8-MLP |
5,256 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16.9A (Ta), 20A (Tc) | 4.5V, 10V | 5.7mOhm @ 16.9A, 10V | 3V @ 250µA | 57nC @ 10V | ±20V | 3890pF @ 15V | - | 2.3W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
|
|
ON Semiconductor |
MOSFET N-CH 80V 50A POWER56 |
4,320 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 50A (Tc) | 10V | 13.4mOhm @ 50A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 1440pF @ 40V | - | 75W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
|
|
Infineon Technologies |
MOSFET N-CH 60V 90A |
4,734 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CHANNEL_100+ |
2,484 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET P-CH 240V 0.2A TO92-3 |
3,258 |
|
- | P-Channel | MOSFET (Metal Oxide) | 240V | 200mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |