트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 478/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Alpha & Omega Semiconductor |
MOSFET N CH 100V 9.5A TO263 |
6,480 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.5A (Ta), 70A (Tc) | 6V, 10V | 9.7mOhm @ 20A, 10V | 3.4V @ 250µA | 52nC @ 10V | ±20V | 2785pF @ 50V | - | 2.1W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 41A 235A 5DFN |
6,390 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 250µA | 65nC @ 10V | ±20V | 4300pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
LOW POWER_LEGACY |
2,898 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Nexperia |
MOSFET N-CH 40V 100A TO220AB |
3,418 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 79nC @ 10V | ±20V | 6200pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 4A ITO220 |
6,498 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4A (Tc) | 10V | 3Ohm @ 1.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 30V 29A 8VQFN |
7,434 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2.35V @ 100µA | 55nC @ 10V | ±20V | 3635pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 40A PPAK SO-8 |
7,794 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 4.5V, 10V | 14mOhm @ 15A, 10V | 2.8V @ 250µA | 42nC @ 10V | ±20V | 1275pF @ 50V | - | 5W (Ta), 44.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-252 |
3,580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CHANNEL 45V 100A 8DFN |
7,110 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 100A (Tc) | 4.5V, 10V | 1.5mOhm @ 20A, 10V | 2.4V @ 250µA | 120nC @ 10V | ±20V | 6575pF @ 22.5V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerSMD, Flat Leads |
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Diodes Incorporated |
MOSFET N-CH 100V 108A TO220AB |
3,780 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 108A (Tc) | 10V | 9.5mOhm @ 13A, 10V | 3.5V @ 250µA | 53.7nC @ 10V | ±20V | 2592pF @ 50V | - | 2.4W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
T6 40V LL LFPAK |
3,240 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 44A (Ta), 258A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 180µA | 109nC @ 10V | ±20V | 6330pF @ 20V | - | 3.9W (Ta), 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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ON Semiconductor |
TRENCH 6 40V SL NFET |
3,150 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 31A (Ta), 185A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 180µA | 69nC @ 10V | ±20V | 4850pF @ 25V | - | 3.9W (Ta), 134W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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Alpha & Omega Semiconductor |
MOSFET N CH 80V 13A TO220 |
4,086 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 13A (Ta), 70A (Tc) | 6V, 10V | 6mOhm @ 20A, 10V | 3.3V @ 250µA | 63nC @ 10V | ±20V | 3142pF @ 40V | - | 2.1W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 60A DPAK-3 |
6,624 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 60A (Ta) | 6V, 10V | 11.2mOhm @ 30A, 10V | 3V @ 1mA | 156nC @ 10V | +10V, -20V | 7760pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 80A DPAK-3 |
5,616 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | +10V, -20V | 7770pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 20V POWERDI5060-8 |
4,248 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 2.5mOhm @ 25A, 10V | 1.4V @ 250µA | 476nC @ 10V | ±12V | 12826pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CHANNEL 8SOIC |
8,910 |
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- | P-Channel | MOSFET (Metal Oxide) | - | - | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 1.6V @ 250µA | 114nC @ 10V | - | 4780pF @ 15V | - | - | -55°C ~ 125°C | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET |
5,994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 150A (Tc) | 4.5V, 10V | 2.5mOhm @ 27A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | ±20V | 4404pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 19A DIRECTFET-SQ |
7,290 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 19A (Ta), 84A (Tc) | 4.5V, 10V | 3.8mOhm @ 19A, 10V | 2.35V @ 25µA | 20nC @ 4.5V | ±20V | 1810pF @ 13V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
2,916 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | ±20V | 6190pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 100A DPAK |
4,662 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | ±20V | 3171pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 800V 3.9A I2PAK |
2,142 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 3.6Ohm @ 1.95A, 10V | 5V @ 250µA | 25nC @ 10V | ±30V | 880pF @ 25V | - | 3.13W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Renesas Electronics America |
MOSFET N-CH 60V 100A TO-220 |
8,550 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 4.6mOhm @ 50A, 10V | - | 133nC @ 10V | ±20V | 7730pF @ 25V | - | 1.5W (Ta), 156W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Isolated Tab |
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Renesas Electronics America |
MOSFET N-CH 60V 100A TO-262 |
7,110 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 10V | 4.6mOhm @ 50A, 10V | - | 133nC @ 10V | ±20V | 7730pF @ 25V | - | 1.5W (Ta), 156W (Tc) | 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V TO-220 |
4,752 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 53A (Tc) | 10V | 16.5mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | ±20V | 3220pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Nexperia |
MOSFET N-CH 100V 98A TO220AB |
2,700 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 98A (Ta) | 7V, 10V | 8.7mOhm @ 25A, 10V | 4V @ 1mA | 44.5nC @ 10V | ±20V | 3181pF @ 50V | - | 183W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
PLANAR >= 100V |
3,726 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 10.5A TO-220FP |
4,536 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 10.5A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | 886pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Microchip Technology |
MOSFET N-CH 18V 400MA SOT89-3 |
4,068 |
|
- | N-Channel | MOSFET (Metal Oxide) | 18V | 400mA (Tj) | 1.2V, 3V | 2.5Ohm @ 200mA, 3V | 1V @ 1mA | - | ±20V | 110pF @ 15V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Microchip Technology |
MOSFET N-CH 30V 640MA TO92-3 |
5,454 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 640mA (Tj) | 5V, 10V | 1.2Ohm @ 1A, 10V | 2.5V @ 1mA | - | ±30V | 190pF @ 20V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |