트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 538/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO247AC |
5,652 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
MOSFET P-CH 150V 44A TO-263 |
3,508 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 44A (Tc) | 10V | 65mOhm @ 22A, 10V | 4V @ 250µA | 175nC @ 10V | ±15V | 13400pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 65V 120A TO-263 |
6,732 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 65V | 120A (Tc) | 10V | 10mOhm @ 500mA, 10V | 4V @ 250µA | 185nC @ 10V | ±15V | 13200pF @ 25V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 75V 230A TO-263 |
5,004 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 230A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 4V @ 250µA | 178nC @ 10V | ±20V | 10500pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 260A TO-263 |
3,168 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 260A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 10800pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 (IXTA..7) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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IXYS |
MOSFET N-CH 1000V 1.5A TO-247 |
6,264 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.5A (Tc) | 10V | 11Ohm @ 1A, 10V | 4.5V @ 25µA | 23nC @ 10V | ±20V | 480pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 54A TO-247 |
8,496 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 54A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 76A TO-247 |
5,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 76A (Tc) | 10V | 39mOhm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 4500pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 250V 50A TO-3P |
5,634 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 50A (Tc) | 10V | 60mOhm @ 25A, 10V | 5V @ 1mA | 78nC @ 10V | ±30V | 4000pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Diodes Incorporated |
MOSFET BVDSS: 41V-60V POWERDI333 |
8,406 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
ON Semiconductor |
MOSFET N-CH 150V 130A |
3,492 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 6.4mOhm @ 18A, 10V | 4V @ 250µA | 135nC @ 10V | ±20V | 9895pF @ 75V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-220 |
6,678 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | - | 165W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 600V 24A TO220AB |
5,184 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 22A TO-247 |
6,120 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 160mOhm @ 11A, 10V | 5.5V @ 1.5mA | 38nC @ 10V | ±30V | 2310pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 31A TO263-3 |
3,222 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 31A (Tc) | 10V | 105mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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MICROSS/On Semiconductor |
MOSFET N-CH 50V 220MA DIE |
5,526 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 220mA (Ta) | 10V | 3.5Ohm @ 220mA, 10V | 1.5V @ 1mA | 2.4nC @ 10V | ±20V | 27pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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MICROSS/On Semiconductor |
MOSFET P-CH 50V 130MA DIE |
5,994 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | 1.3nC @ 5V | ±20V | 73pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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MICROSS/On Semiconductor |
DIE MOSFET N-CH 100V |
7,290 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 48A TO220-3 |
3,582 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 500V 26A TO-263AA |
2,520 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5V @ 4mA | 42nC @ 10V | ±30V | 2220pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 40V 340A |
7,524 |
|
TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 340A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 4V @ 250µA | 256nC @ 10V | ±15V | 13000pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 16A TO-247 |
4,500 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 470mOhm @ 500mA, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1830pF @ 25V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
MOSFET N-CH 850V 14A TO263 |
7,920 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 850V | 14A (Tc) | 10V | 550mOhm @ 500mA, 10V | 5.5V @ 1mA | 30nC @ 10V | ±30V | 1043pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO262-3 |
3,672 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET HIGH POWER_NEW |
7,488 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXYS |
MOSFET N-CH 600V 20A TO220AB |
2,898 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 200mOhm @ 10A, 10V | 3.5V @ 1.1mA | 45nC @ 10V | ±20V | 1520pF @ 100V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 650V TO247 |
5,112 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V 6A D2PAK |
8,514 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2.4Ohm @ 500mA, 10V | 5V @ 1mA | 92nC @ 10V | ±30V | 2830pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1200V 2.4A TO-220 |
7,758 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 2.4A (Tc) | 10V | 7.5Ohm @ 500mA, 10V | 4.5V @ 250µA | 37nC @ 10V | ±20V | 1207pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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IXYS |
MOSFET P-CH 150V 36A TO-220 |
4,734 |
|
PolarP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 4.5V @ 250µA | 55nC @ 10V | ±20V | 3100pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |