트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 57/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Nexperia |
MOSFET P-CH 30V 4.2A TO236AB |
25,176 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.2A (Ta) | 4.5V, 10V | 45mOhm @ 4.2A, 10V | 3V @ 250µA | 19.2nC @ 10V | ±20V | 793pF @ 15V | - | 310mW (Ta), 455mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 9.5A 8DFN |
862,722 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.5A (Ta), 24A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 660pF @ 15V | - | 3.1W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 200MA 3-DFN |
1,431,354 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4V | 1.5Ohm @ 10mA, 4V | 900mV @ 100µA | - | ±10V | 41pF @ 3V | - | 400mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | X2-DFN1006-3 | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 170MA SOT23-3 |
839,688 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 100mA, 10V | 2V @ 1mA | - | ±20V | 20pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET P-CH 30V 470MA SOT23 |
627,384 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 470mA (Ta) | 1.8V, 4.5V | 900mOhm @ 280mA, 4.5V | 680mV @ 1mA | 2.2nC @ 4.5V | ±8V | 110pF @ 24V | - | 417mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 700MA SC59-3 |
624,618 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 700mA (Ta) | 4.5V, 10V | 250mOhm @ 400mA, 10V | 3V @ 1mA | - | ±20V | 160pF @ 10V | - | 500mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SC-59-3 | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET N-CH 30V 2.3A LGA |
332,808 |
|
FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 1.8V, 8V | 64mOhm @ 500mA, 8V | 1.2V @ 250µA | 2.7nC @ 4.5V | 10V | 347pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 60V 300MA SOT-523 |
90,666 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 150mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A SOT23 |
101,034 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.5V, 4.5V | 54mOhm @ 4.3A, 4.5V | 1.1V @ 10µA | 6.9nC @ 4.5V | ±12V | 570pF @ 16V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 25V 5.8A SOT23 |
81,546 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 5.8A (Ta) | 4.5V, 10V | 24mOhm @ 5.8A, 10V | 2.35V @ 10µA | 5.4nC @ 10V | ±20V | 430pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 3.8A SOT23-3 |
73,764 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 70mOhm @ 3.8A, 10V | 2.1V @ 250µA | 8nC @ 4.5V | ±20V | 1008pF @ 25V | - | 1.08W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.6A SOT23 |
53,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 4.5V, 10V | 140mOhm @ 1.8A, 10V | 3V @ 250µA | 8.6nC @ 10V | ±20V | 315pF @ 40V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 1.8A ES6 |
30,696 |
|
U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 1.8A (Ta) | 1.8V, 8V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
29,532 |
|
U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 8V | 22.1mOhm @ 6A, 8V | 1V @ 1mA | 38.5nC @ 8V | ±10V | 1331pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 3.2A SOT23 |
138,840 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 4.5V | 55mOhm @ 3.2A, 4.5V | 1V @ 250µA | 10nC @ 10V | ±8V | 990pF @ 10V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 350MA SC-89 |
151,458 |
|
PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 350mA (Ta) | 1.8V, 4.5V | 1.2Ohm @ 350mA, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | ±8V | 100pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Diodes Incorporated |
MOSFET N-CH 30V 6.2A SOT23 |
133,272 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.2A (Ta) | 2.5V, 10V | 25mOhm @ 4A, 10V | 1.8V @ 250µA | 18.4nC @ 10V | ±20V | 873pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 2.6A SOT23-3 |
43,776 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 2.6A (Ta) | 4.5V, 10V | 70mOhm @ 2.5A, 10V | 3V @ 250µA | 4nC @ 5V | ±20V | 225pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 6.6A 6-SOT26 |
52,698 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.6A (Ta) | 4.5V, 10V | 23mOhm @ 6.5A, 10V | 2V @ 250µA | 12.5nC @ 10V | ±20V | 643pF @ 15V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Texas Instruments |
MOSFET N-CH 30V 3A 3-PICOSTAR |
630,450 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 1.8V, 8V | 121mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.2nC @ 4.5V | 12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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ON Semiconductor |
MOSFET N-CH 20V 3.2A SOT-363 |
152,430 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 4.5V | 60mOhm @ 4A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | ±8V | 500pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 100V 0.17A SOT-323 |
289,332 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2V @ 1mA | - | ±20V | 71pF @ 25V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 (SOT323) | SC-70, SOT-323 |
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|
ON Semiconductor |
MOSFET P-CH 20V 3.3A SC-88 |
202,746 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 1.8V, 4.5V | 60mOhm @ 3.3A, 4.5V | 1.2V @ 250µA | 10nC @ 4.5V | ±12V | 850pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
|
|
|
Nexperia |
MOSFET P-CH 30V 520MA SOT23 |
119,232 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 520mA (Ta) | 4.5V, 10V | 900mOhm @ 280mA, 10V | 1.9V @ 1mA | 2.9nC @ 10V | ±20V | 80pF @ 24V | - | 417mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
|
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ON Semiconductor |
MOSFET N-CH 20V 3.6A SOT23-3 |
53,982 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.8V, 4.5V | 24mOhm @ 5A, 4.5V | 1V @ 250µA | 17.8nC @ 4.5V | ±8V | 1540pF @ 16V | - | 470mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET P-CH 20V 3.2A SOT23 |
25,410 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.8A (Ta) | 1.8V, 4.5V | 85mOhm @ 1.6A, 4.5V | 1.2V @ 250µA | 8.5nC @ 4.5V | ±8V | 675pF @ 10V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
|
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|
Toshiba Semiconductor and Storage |
X34 : SMALL LOW ON RESISTANCE NC |
29,868 |
|
π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8pF @ 3V | - | 200mW (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
|
|
|
ON Semiconductor |
MOSFET P-CH 30V 2.2A SOT23 |
600,276 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.2A (Ta) | 2.5V, 10V | 75mOhm @ 2.2A, 10V | 1.4V @ 250µA | 15.6nC @ 10V | ±12V | 720pF @ 15V | - | 480mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 6.5A SOT23 |
234,012 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Tc) | 4.5V, 10V | 24mOhm @ 6A, 10V | 2.5V @ 250µA | 4.1nC @ 4.5V | ±20V | 345pF @ 25V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 60V 3A SOT23 |
159,600 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Tc) | 4.5V, 10V | 85mOhm @ 2.3A, 10V | 2.5V @ 250µA | 9.5nC @ 10V | ±20V | 529pF @ 30V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |