트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 618/999
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부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
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Vishay Siliconix |
MOSFET N-CH 100V 4.3A I-PAK |
7,326 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.3A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 44A I-PAK |
4,248 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 150V 14A I-PAK |
4,338 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 620pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 150V 18A I-PAK |
6,822 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 250V 2.2A I-PAK |
2,088 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 250V 3.8A I-PAK |
2,844 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 3.8A (Tc) | 10V | 1.1Ohm @ 2.3A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 100V 16A I-PAK |
5,292 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 27A I-PAK |
3,708 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 150V 13A I-PAK |
7,848 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 55V 11A I-PAK |
2,466 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 250V 2.7A I-PAK |
5,202 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A I-PAK |
8,100 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 270pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 200V 9.4A I-PAK |
6,948 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 10V | 380mOhm @ 5.6A, 10V | 5.5V @ 250µA | 27nC @ 10V | ±30V | 560pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 600V 2A I-PAK |
8,550 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Tc) | 10V | 4.4Ohm @ 1.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 28A I-PAK |
6,516 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A TSOP-6 |
7,524 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 2W (Ta) | - | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 20V 2.4A MICRO-8 |
7,074 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.7V, 4.5V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 2.7A MICRO-8 |
3,240 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | ±20V | 210pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A MICRO-8 |
6,984 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12A 8-SOIC |
8,928 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 13.5mOhm @ 6.6A, 10V | 1V @ 250µA | 79nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 4.5A 8-SOIC |
5,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 10V | 60mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 930pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 15A 8-SOIC |
5,580 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | ±20V | 3100pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
5,274 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2480pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
7,830 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 2050pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 1.2A 8-SOIC |
5,454 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 1.2A (Ta) | 10V | 730mOhm @ 720mA, 10V | 5.5V @ 250µA | 14nC @ 10V | ±30V | 280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
7,614 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 12.5mOhm @ 11A, 10V | 3V @ 250µA | 23nC @ 4.5V | ±20V | 2100pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
8,622 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 2.8V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 32nC @ 4.5V | ±12V | 2530pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 9.4A 8-SOIC |
2,844 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | ±12V | 2460pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12.5A 8-SOIC |
8,820 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78nC @ 10V | ±20V | 2240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT223 |
6,660 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |