트랜지스터-FET, MOSFET-단일
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
필터보기
필터 재설정
필터 적용
카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 628/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-262 |
7,182 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A TO-220AB |
7,884 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
6,282 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
2,682 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
6,246 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
4,950 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
5,832 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 1.8A TO-262 |
5,166 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 1.8A D2PAK |
8,640 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 1.8A D2PAK |
4,266 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 1.8A D2PAK |
5,670 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 1.8A (Tc) | 10V | 6.5Ohm @ 1.1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 530pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 4.1A TO-262 |
6,354 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
7,758 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
8,334 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
5,940 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
5,472 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 1.7A D2PAK |
7,308 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-262 |
5,148 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
3,276 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
6,210 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 900V 3.6A D2PAK |
6,930 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Vishay Siliconix |
MOSFET N-CH 1000V 1.4A TO-262 |
6,696 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.4A (Ta) | 10V | 11Ohm @ 840mA, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 500pF @ 25V | - | - | - | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 21A SUPER D2PAK |
3,924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | SUPER D2-PAK | Super D2-Pak |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 40A TO220FP |
2,448 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 40A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 3400pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 41A TO-220FP |
2,718 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 41A (Tc) | 10V | 20mOhm @ 22A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3400pF @ 25V | - | 63W (Tc) | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
|
|
|
Vishay Siliconix |
MOSFET N-CH 100V 7.2A TO220FP |
3,528 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.2A (Tc) | 10V | 270mOhm @ 4.3A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 2.6A TO220FP |
7,416 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.6A (Ta) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Vishay Siliconix |
MOSFET N-CH 400V 1.6A TO220FP |
5,112 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 1.6A (Ta) | - | - | 4V @ 250µA | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 5.5A TO220FP |
6,750 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.5A (Tc) | 10V | 480mOhm @ 4A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 7.7A TO-220FP |
2,358 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Ta) | - | 300mOhm @ 4.6A, 10V | 4V @ 250µA | 38nC @ 10V | - | 860pF @ 25V | - | - | - | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |