트랜지스터-FET, MOSFET-단일
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카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 957/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
MOSFET P-CH 8V 3.6A MICRO |
4,266 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 4.6A (Ta) | 4.5V | 64mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 17nC @ 4.5V | ±5V | 900pF @ 4V | - | 780mW (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-UFBGA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 12A SC-70 |
3,240 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 17mOhm @ 7.4A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 560pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 12V 9A SC-75-6L |
5,724 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 9A (Tc) | 4.5V | 19mOhm @ 3A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | ±5V | - | - | 2.5W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
|
|
|
Infineon Technologies |
CONSUMER |
5,670 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
CONSUMER |
7,794 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
CONSUMER |
7,038 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
HIGH POWER_LEGACY |
6,786 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
8,712 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
7,722 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
5,256 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
4,554 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
8,262 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
5,058 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
6,534 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
8,748 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
8,514 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
3,402 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
3,544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
6,696 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
3,762 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
LV POWER MOS |
8,172 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
2,448 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CHANNEL_55/60V |
4,662 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
8,640 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
7,974 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
8,622 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
4,644 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
3,024 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
4,824 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH |
5,364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220NIS | TO-220-3 Full Pack |