트랜지스터-FET, MOSFET-단일
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
필터보기
필터 재설정
필터 적용
카테고리반도체 / 트랜지스터 / 트랜지스터-FET, MOSFET-단일
기록 29,970
페이지 971/999
이미지 |
부품 번호 |
제조업체 |
설명 |
재고 있음 |
수량 |
시리즈 | FET 유형 | 기술 | 드레인-소스 전압 (Vdss) | 전류-25 ° C에서 연속 드레인 (Id) | 드라이브 전압 (최대 Rds On, 최소 Rds On) | Rds On (최대) @ Id, Vgs | Vgs (th) (최대) @ Id | 게이트 충전 (Qg) (최대) @ Vgs | Vgs (최대) | 입력 커패시턴스 (Ciss) (최대) @ Vds | FET 기능 | 전력 손실 (최대) | 작동 온도 | 장착 유형 | 공급자 장치 패키지 | 패키지 / 케이스 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
3,024 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
7,668 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH BARE DIE |
6,642 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 7.1A TO251-3 |
5,922 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH |
4,788 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
6,732 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
5,004 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH |
5,166 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 4.5A TO252-3 |
4,878 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252-3 |
5,040 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 900V 6.9A TO262-3 |
7,974 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 900V 11A TO220-3 |
3,418 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V 8A TO262-3 |
8,856 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 3.2A TO251-3 |
3,042 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 14.6A 8SOIC |
6,570 |
|
SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14.6A (Tc) | 4.5V, 10V | 13mOhm @ 15A, 10V | 2.5V @ 1mA | 28nC @ 10V | ±20V | 1084pF @ 15V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Diodes Incorporated |
MOSFET N-CH 30V 7A PWRDI3333-8 |
3,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 13mOhm @ 11.2A, 10V | 2.2V @ 250µA | 44.6nC @ 10V | ±12V | 1886pF @ 15V | Schottky Diode (Body) | 980mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
|
|
|
Nexperia |
PMPB100ENEA/SOT1220/SOT1220 |
5,922 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
|
|
|
Nexperia |
PMPB16XNEA/SOT1220/SOT1220 |
5,904 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
|
|
|
Nexperia |
PMPB25ENEA/SOT1220/SOT1220 |
7,398 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 24mOhm @ 7.2A, 10V | 2.5V @ 250µA | 19nC @ 10V | ±20V | 607pF @ 15V | - | 2.08W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
|
|
|
Nexperia |
PMPB50ENEA/SOT1220/SOT1220 |
6,822 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 4.5V, 10V | 43mOhm @ 5.1A, 10V | 2.5V @ 250µA | 10nC @ 10V | ±20V | 271pF @ 15V | - | 1.9W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
|
|
|
Microsemi |
MOSFET N-CH 700V TO247 |
8,262 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 110A (Tc) | 20V | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | +25V, -10V | 3950pF @ 700V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 700V SOT227 |
6,390 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 78A (Tc) | 20V | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 270nC @ 20V | +25V, -10V | 3950pF @ 700V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 700V TO247 |
6,390 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 700V | 35A (Tc) | 20V | 145mOhm @ 10A, 20V | 2.5V @ 1mA | 67nC @ 20V | +25V, -10V | 1035pF @ 700V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 700V D3PAK |
8,766 |
|
- | - | SiCFET (Silicon Carbide) | 700V | 35A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 700V TO247 |
5,436 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 5A (Tc) | 20V | 1.25Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | +25V, -10V | 249pF @ 1000V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 700V D3PAK |
2,196 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 4.6A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.2V @ 500µA | 29nC @ 20V | +25V, -10V | 325pF @ 1000V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
|
|
ON Semiconductor |
MOSFET N-CH TRENCH PTNG 100V |
8,712 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 240A (Tc) | 10V | 2.6mOhm @ 80A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5120pF @ 50V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
|
|
|
ON Semiconductor |
MOSFET P-CH PWR TRENCH PT8-40V |
2,718 |
|
Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 80A, 10V | 3V @ 250µA | 107nC @ 10V | ±16V | 4840pF @ 20V | - | 214W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 650V 27 MOHM TO247 P |
6,030 |
|
FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 7.5mA | 259nC @ 10V | ±30V | 7690pF @ 400V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 54A DPAK |
7,038 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 21nC @ 11.5V | ±20V | 1350pF @ 12V | - | 1.4W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |