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Taiwan Semiconductor Corporation 정류기-싱글

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카테고리반도체 / 다이오드 및 정류기 / 정류기-싱글
제조업체Taiwan Semiconductor Corporation
기록 5,388
페이지 18/180
이미지
부품 번호
제조업체
설명
재고 있음
수량
시리즈
다이오드 유형
전압-DC 역방향 (Vr) (최대)
전류-평균 정류 (Io)
전압-순방향 (Vf) (최대) @ If
속도
역 복구 시간 (trr)
전류-역방향 누설 @ Vr
커패시턴스 @ Vr, F
장착 유형
패키지 / 케이스
공급자 장치 패키지
작동 온도-접합
SS315LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 3A SOD123W
7,488
-
Schottky
150V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 150V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
HER108G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A DO204AL
3,454
-
Standard
1000V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SR210 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO204AC
3,474
-
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
RS2AAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO214AC
2,106
-
Standard
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HS3DB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
16,848
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ESH1JM RSG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A MICRO SMA
6,408
-
Standard
600V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 600V
3pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 150°C
SR504 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 5A DO201AD
14,388
-
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
S10GC V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 10A DO214AB
7,398
-
Standard
400V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS24 R5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 2A DO214AA
18,828
-
Schottky
40V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 125°C
SR510 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 5A DO201AD
12,276
-
Schottky
100V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SS24MHRSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 2A MICRO SMA
7,542
-
Schottky
40V
2A
600mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 40V
35pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 150°C
HS1DL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
4,410
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
S2A R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
15,456
-
Standard
50V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 50V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
UF1JLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SOD123W
6,642
-
Standard
600V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
UF1GLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123W
7,470
-
Standard
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
1µA @ 400V
25pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
S3ABHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AA
21,540
-
Standard
50V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 50V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3GB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
21,840
-
Standard
400V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 400V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3KB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AA
21,708
-
Standard
800V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 800V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
MUR440S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO214AB
21,288
-
Standard
400V
4A
1.25V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
S3MB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 3A DO214AA
18,576
-
Standard
1000V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 1000V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S2M R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 2A DO214AA
15,240
-
Standard
1000V
2A
1.15V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 1000V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3JB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
15,768
-
Standard
600V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 600V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3KB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AA
16,128
-
Standard
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
S3BB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AA
21,768
-
Standard
100V
3A
1.15V @ 3A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
10µA @ 100V
40pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
MUR420S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO214AB
15,864
-
Standard
200V
4A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
UF1GLW RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SOD123W
6,930
-
Standard
400V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
1µA @ 400V
25pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
MUR460S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
15,528
-
Standard
600V
4A
1.25V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
65pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 175°C
SS310L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 3A SUB SMA
5,472
-
Schottky
100V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JLWHRVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SOD123W
5,022
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
SS34 V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 40V DO-214AB
15,588
-
Schottky
40V
3A
500mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C